NPN Transistor. MJE3055 Datasheet

MJE3055 Transistor. Datasheet pdf. Equivalent


Part MJE3055
Description NPN Transistor
Feature JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors MJE3055 T.
Manufacture JIANGSU CHANGJIANG ELECTRONICS
Datasheet
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MJE3055
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
MJE3055 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
2 W (Tamb=25)
Collector current
ICM: 10
Collector-base voltage
A
V(BR)CBO:
70 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
Collector-emitter saturation voltage
VCE(sat)
Base-emitter voltage
Transition frequency
VBE
fT
Test conditions
Ic=1mA, IE=0
Ic=200mA, IB=0
IE=1mA, IC=0
VCB=70V, IE=0
VCE=30V, IE=0
VEB=5V, IC=0
VCE=4V, IC=4A
VCE=4V, IC=10A
IC=4A, IB=400mA
IC=10A, IB=3.3A
VCE=4V, IC=4A
VCE=10V, IC=500mA
MIN TYP MAX UNIT
70 V
60 V
5V
1 mA
0.7 mA
5 mA
20 100
5
1.1 V
8V
1.8 V
2 MHz





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