MJE3055

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors MJE3055 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 10 Collector-base voltage A V(BR)CBO: 70 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ TO-220 1. BASE 2. COLLECTOR 3. EMITTER 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) Collector-emitter saturation voltage VCE(sat) Base-emitter voltage Transition frequency VBE fT Test conditions Ic=1mA, IE=0 Ic=200mA, IB=0 IE=1mA, IC=0 VCB=70V, IE=0 VCE=30V, IE=0 VEB=5V, IC=0 VCE=4V, IC=4A VCE=4V, IC=10A IC=4A, IB=400mA IC=10A, IB=3.3A VCE=4V, IC=4A VCE=10V, IC=500mA MIN TYP MAX UNIT 70 V 60 V 5V 1 mA 0.7 mA 5 mA 20 100 5 1.1 V 8V 1.8 V 2 MHz ...