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2SJ133-Z Dataheets PDF



Part Number 2SJ133-Z
Manufacturers NEC
Logo NEC
Description P-Channel Power MOSFET
Datasheet 2SJ133-Z Datasheet2SJ133-Z Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (VGS = –4 V) • High current control available in small dimension due to low RDS(on) (≅ 0.45 Ω) • 2SJ133-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grad.

  2SJ133-Z   2SJ133-Z


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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (VGS = –4 V) • High current control available in small dimension due to low RDS(on) (≅ 0.45 Ω) • 2SJ133-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Conditions Drain to source voltage VDSS VGS = 0 Gate to source voltage VGSS VDS = 0 Drain current (DC) Drain current (pulse) ID(DC) ID(pulse) TC = 25°C PW ≤ 300 µs duty cycle ≤ 10 % Total power dissipation PT TC = 25°C Total power dissipation PT Ta = 25°C Channel temperature Tch Storage temperature Tstg * Printing board mounted ** 7.5 cm2 × 0.7 mm ceramic board mounted PACKAGE DRAWING (UNIT: mm) Ratings −60 +–20 +–2.0 +–8.0 Electrode connection <1> Gate (G) <2> Drain (D) <3> Source (S) <4> Fin (drain) Unit INTERNAL EQUIVALENT CIRCUIT V V A A 20 1.0*, 2.0** 150 −55 to +150 W W °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16193EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 21090928 2SJ133, 2SJ133-Z ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Drain cutoff current Gate cutoff current Gate cutoff voltage Forward transfer admittance Drain to source on-state resistance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS VGS(off)  yts  Conditions VDS = −60 V, VGS = 0 VGS = +–20 V, VDS = 0 VDS = −10 V, ID = −1.0 mA VDS = −10 V, ID = −1.0 A RDS(on)1 VGS = −10 V, ID = −1.0 A RDS(on)2 VGS = −4 V, ID = −0.8 A Ciss Coss Crss VDS = −10 V, VGS = 0 V f = 1 MHz td(on) tr td(off) tf ID = −1.0 A, VGS(on) = −10 V VDD ≅ −30 V, RL = 30 Ω, Rin = 10 Ω MIN. −1.0 1.0 TYP. −2.0 1.8 MAX. −10 +–100 −3.0 Unit µA nA V S 0.45 0.8 Ω 0.7 1.3 Ω 660 pF 250 pF 50 pF 30 ns 30 ns 110 ns 40 ns SWITCHING TIME TEST CIRCUIT, TEST CONDITION (RESISTANCE LOAD) 2 Data Sheet D16193EJ2V0DS TYPICAL CHARACTERISTICS (Ta = 25°C) 2SJ133, 2SJ133-Z Data Sheet D16193EJ2V0DS 3 2SJ133, 2SJ133-Z 4 Data Sheet D16193EJ2V0DS 2SJ133, 2SJ133-Z Data Sheet D16193EJ2V0DS 5 2SJ133, 2SJ133-Z • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assura.


2SJ133 2SJ133-Z J133


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