DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SJ133, 2SJ133-Z
P-CHANNEL POWER MOS FET
FOR SWITCHING
FEATURES
• Gate drive available at logic level (VGS = –4 V)
• High current control available in small
dimension due to low RDS(on) (≅ 0.45 Ω)
• 2SJ133-Z is a lead process product and is deal
for mounting a hybrid IC.
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC
Semiconductor Devices” (Document No.
C11531E) published by NEC Corporation to
know the specification of quality grade on the
devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Conditions
Drain to source voltage
VDSS
VGS = 0
Gate to source voltage
VGSS
VDS = 0
Drain current (DC)
Drain current (pulse)
ID(DC)
ID(pulse)
TC = 25°C
PW ≤ 300 µs
duty cycle ≤ 10 %
Total power dissipation
PT TC = 25°C
Total power dissipation
PT Ta = 25°C
Channel temperature
Tch
Storage temperature
Tstg
* Printing board mounted
** 7.5 cm2 × 0.7 mm ceramic board mounted
PACKAGE DRAWING (UNIT: mm)
Ratings
−60
+–20
+–2.0
+–8.0
Electrode connection
<1> Gate (G)
<2> Drain (D)
<3> Source (S)
<4> Fin (drain)
Unit INTERNAL
EQUIVALENT CIRCUIT
V
V
A
A
20
1.0*, 2.0**
150
−55 to +150
W
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16193EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
