Document
SDD120
Diode-Diode Modules
Type
SDD120N08 SDD120N12 SDD120N14 SDD120N16 SDD120N18
VRSM V
900 1300 1500 1700 1900
VRRM V
800 1200 1400 1600 1800
Dimensions in mm (1mm=0.0394")
Symbol
Test Conditions
IFRMS IFAVM IFSM
i2dt
TVJ=TVJM TC=105oC; 180o sine
TVJ=45oC VR=0 TVJ=TVJM VR=0
TVJ=45oC VR=0 TVJ=TVJM VR=0
t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine
t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine
TVJ TVJM Tstg
VISOL
50/60Hz, RMS IISOL<_1mA
t=1min t=1s
Md
Mounting torque (M5) Terminal connection torque (M5)
Weight Typical including screws
Maximum Ratings
180 120
2800 3300 2500 2750
39200 45000 31200 31300
-40...+150 150
-40...+125
3000 3600
2.5-4/22-35 2.5-4/22-35
90
Unit A
A
A2s
oC V~ Nm/lb.in. g
SDD120
Diode-Diode Modules
Symbol
Test Conditions
IR VF VTO rT QS IRM
RthJC
RthJK
dS dA a
TVJ=TVJM; VR=VRRM IF=300A; TVJ=25oC For power-loss calculations only TVJ=TVJM TVJ=125oC; IF=50A; -di/dt=6A/us
per diode; DC current per module per diode; DC current per module Creepage distance on surface Strike distance through air Maximum allowable acceleration
Characteristic Values
15 1.43 0.75 1.95 170 45 0.26 0.13 0.46 0.23 12.7 9.6 50
Unit mA V V m uC A
K/W
K/W
mm mm m/s2
FEATURES
* International standard package * Copper base plate * Planar passivated chips * Isolation voltage 3600 V~
APPLICATIONS
* Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies
ADVANTAGES
* Space and weight savings * Simple mounting * Improved temperature and power
cycling * Reduced protection circuits
SDD120
Diode-Diode Modules
Fig. 1 Surge overload current IFSM: Crest value, t: duration
Fig. 2 i2dt versus time (1-10 ms)
Fig. 2a Maximum forward current at case temperature
Fig. 3 Power dissipation versus forward current and ambient temperature (per diode)
2 x SDD120
Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load
SDD120
Diode-Diode Modules
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
3 x SDD120
Fig. 6 Transient thermal impedance junction to case (per diode)
RthJC for various conduction angles d:
d DC 180oC 120oC 60oC 30oC
RthJC (K/W)
0.26 0.28 0.30 0.34 0.38
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1 0.013
0.0012
2 0.072
0.047
3 0.175
0.394
Fig. 7 Transient thermal impedance junction to heatsink (per diode)
RthJK for various conduction angles d:
d DC 180oC 120oC 60oC 30oC
RthJK (K/W)
0.46 0.48 0.50 0.54 0.58
Constants for Z calculation: thJK
i
Rthi (K/W)
ti (s)
1 0.013
0.0012
2 0.072
0.047
3 0.175
0.394
4 0.2
1.32
.