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SDD120N14 Dataheets PDF



Part Number SDD120N14
Manufacturers Sirectifier
Logo Sirectifier
Description Diode-Diode Modules
Datasheet SDD120N14 DatasheetSDD120N14 Datasheet (PDF)

SDD120 Diode-Diode Modules Type SDD120N08 SDD120N12 SDD120N14 SDD120N16 SDD120N18 VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Dimensions in mm (1mm=0.0394") Symbol Test Conditions IFRMS IFAVM IFSM i2dt TVJ=TVJM TC=105oC; 180o sine TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine TVJ TVJM Tstg VISOL 50/.

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SDD120 Diode-Diode Modules Type SDD120N08 SDD120N12 SDD120N14 SDD120N16 SDD120N18 VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Dimensions in mm (1mm=0.0394") Symbol Test Conditions IFRMS IFAVM IFSM i2dt TVJ=TVJM TC=105oC; 180o sine TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine TVJ TVJM Tstg VISOL 50/60Hz, RMS IISOL<_1mA t=1min t=1s Md Mounting torque (M5) Terminal connection torque (M5) Weight Typical including screws Maximum Ratings 180 120 2800 3300 2500 2750 39200 45000 31200 31300 -40...+150 150 -40...+125 3000 3600 2.5-4/22-35 2.5-4/22-35 90 Unit A A A2s oC V~ Nm/lb.in. g SDD120 Diode-Diode Modules Symbol Test Conditions IR VF VTO rT QS IRM RthJC RthJK dS dA a TVJ=TVJM; VR=VRRM IF=300A; TVJ=25oC For power-loss calculations only TVJ=TVJM TVJ=125oC; IF=50A; -di/dt=6A/us per diode; DC current per module per diode; DC current per module Creepage distance on surface Strike distance through air Maximum allowable acceleration Characteristic Values 15 1.43 0.75 1.95 170 45 0.26 0.13 0.46 0.23 12.7 9.6 50 Unit mA V V m uC A K/W K/W mm mm m/s2 FEATURES * International standard package * Copper base plate * Planar passivated chips * Isolation voltage 3600 V~ APPLICATIONS * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits SDD120 Diode-Diode Modules Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) 2 x SDD120 Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load SDD120 Diode-Diode Modules Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 3 x SDD120 Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJC (K/W) 0.26 0.28 0.30 0.34 0.38 Constants for ZthJC calculation: i Rthi (K/W) ti (s) 1 0.013 0.0012 2 0.072 0.047 3 0.175 0.394 Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJK (K/W) 0.46 0.48 0.50 0.54 0.58 Constants for Z calculation: thJK i Rthi (K/W) ti (s) 1 0.013 0.0012 2 0.072 0.047 3 0.175 0.394 4 0.2 1.32 .


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