Ultrahigh-Speed Switching Applications
Ordering number:EN4887
FX604
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Features
· Composite type...
Description
Ordering number:EN4887
FX604
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Features
· Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting. · The FX604 is formed with two chips, each being equivalent to the 2SK1467, placed in one package. · Matched pair characteristics.
Package Dimensions
unit:mm 2120
[FX604]
1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1 SANYO:XP6 (Bottom view)
Switching Time Test CIrcuit
Electrical Connection
1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1 (Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PD PT Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C, 1unit Mounted on ceramic board (750mm2×0.8mm) 1unit Mounted on ceramic board (750mm2×0.8mm) Conditions Ratings 30 ±15 2 8 6 1.5 2 150 –55 to +150 Unit V V A A W W W ˚C ˚C
· Marking:604
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71095MO(KOTO) TA-0110 No.4887-1/4
FX604
Continued from preceding page. Electrical Characteristics at Ta = 25˚C
Parameter D-S Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sour...
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