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FX606 Dataheets PDF



Part Number FX606
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description Ultrahigh-Speed Switching Applications
Datasheet FX606 DatasheetFX606 Datasheet (PDF)

Ordering number:EN4889 FX606 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features · Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting. · The FX606 is formed with two chips, each being equivalent to the 2SK1470, placed in one package. · Matched pair characteristics. Package Dimensions unit:mm 2120 [FX606] 1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1 SANYO.

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Ordering number:EN4889 FX606 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features · Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting. · The FX606 is formed with two chips, each being equivalent to the 2SK1470, placed in one package. · Matched pair characteristics. Package Dimensions unit:mm 2120 [FX606] 1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1 SANYO:XP6 (Bottom view) Switching Time Test Circuit Electrical Connection 1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1 (Top view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PD PT Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C, 1 unit Mounted on ceramic board (750mm2×0.8mm) 1 unit Mounted on ceramic board (750mm2×0.8mm) Conditions Ratings 60 ±15 2 8 6 1.5 2 150 –55 to +150 Unit V V A A W W W ˚C ˚C · Marking:606 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/71095MO(KOTO) TA-0112 No.4889-1/4 FX606 Continued from preceding page. Electrical Characteristics at Ta = 25˚C Parameter D-S Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | Yfs | RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VSD ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=±12, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=10V ID=1A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit IS=1.2A, VGS=0 1.0 1.2 2.0 0.35 0.45 150 60 12 6 10 60 20 1.0 0.45 0.6 Conditions Ratings min 60 100 ±10 2.0 typ max Unit V µA µA V S Ω Ω pF pF pF ns ns ns ns V No.4889-2/4 FX606 No.4889-3/4 FX606 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such.



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