FGW75N60HD

http://www.fujielectric.com/products/semiconductor/ FGW75N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Equivalent circuit Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES DC Collector Current Pulsed Collector Current Turn-Off Safe Operating Area Diode Forward Current Diode Pulsed Current IC@25 IC@100 ICP IF@25 IF@100 IFP Short Circuit Withstand Time tSC IGBT Max. Power Dissipation PD_IGBT FWD Max. Power Dissipation PD_FWD Operating Junction Temperature Tj Storage Temperature Tstg Characteristics 600 ±20 100 75 225 225 60 35 225 5 500 190 -40~+175 -55~+175 Units Remarks V V A TC=25°C, Tj=150°C Note *1 A TC=100°C, Tj=150°C A Note *2 A VCE≤600V, Tj≤175°C A Note *1 A A Note *1 μs VCC≤300V, VGE=12V Tj≤175°C W TC=25°C TC=25°C °C °C Gate Collector Emitter Note *1 : Current value limited by bonding wire. Note *2 : Pulse width limited by Tjmax. Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Collector-Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output ...