ST 2SD1303
NPN Silicon Epitaxial Planar Transistor for audio muting application.
On special request, these transistors c...
ST 2SD1303
NPN Silicon Epitaxial Planar
Transistor for audio muting application.
On special request, these
transistors can be manufactured in different pin configurations.
Features
˙ High emitter-base voltage VEBO=7.5V(min)* ˙ High reverse hFE
reverse hFE=20(min) (VCE=2V, IC=4mA)
˙ Low on resistance
Ron=0.6Ω (Typ.) (IB=1mA)
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25 oC)
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC IB Ptot Tj TS
G S P FORM A IS AVAILABLE
Value 25 16 7.5* 300 30 400 125
-55 to +125
Unit V V V mA mA
mW OC OC
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: www.rct.ru
®
ST 2SD1303
Characteristics at Tamb=25 oC
DC Current Gain at VCE=2V, IC=4mA (for) at VCE=2V, IC=4mA (rev)
Collector Cutoff Current at VCB=25V
Emitter Cutoff Current at VEB=7.5V
Collector Emitter Saturation Voltage at IC=100mA, IB=10mA
Base Emitter Saturation Voltage at IC=100mA, IB=10mA
Transition Frequency at VCE=10V, IE=1mA
Collector Output Capacitance at VCB=10V, f=1MHz
On Resistance at IB=1mA, f=1KHz, Vin=0.3V
Symbol hFE hFE ICBO IEBO
VCE(sat) VBE(sat)
fT COB Ron
Min. 200 20
-
G S P FORM A IS AVAILABLE
Typ. 60 10
0.6
Max. 800
0.1 0.1 0.25 1
-
Unit µA µA V V
MHz pF Ω
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany listed on ...