PNP TRANSISTOR. MP2510 Datasheet

MP2510 TRANSISTOR. Datasheet pdf. Equivalent

Part MP2510
Description PNP TRANSISTOR
Feature UNISONIC TECHNOLOGIES CO., LTD MP2510 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP TRANSISTOR.
Manufacture UTC
Datasheet
Download MP2510 Datasheet





MP2510
UNISONIC TECHNOLOGIES CO., LTD
MP2510
Preliminary PNP EPITAXIAL SILICON TRANSISTOR
PNP TRANSISTOR
DESCRIPTION
The UTC MP2510 is a PNP transistor, it uses UTC’s advanced
technology to provide the customers with high DC current gain and
high collector-emitter breakdown voltage, etc.
The UTC MP2510 is suitable for automobile power amplifiers,
etc.
FEATURES
* High DC current gain (Min = 40@VCE = 4V, IC = 12A)
* High collector-emitter breakdown voltage (Min = -100V)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MP2510L-x-T3P-T
MP2510G-x-T3P-T
Pin Assignment: B: Base C: Collector E: Emitter
Package
TO-3P
Pin Assignment
123
BCE
Packing
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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MP2510
MP2510
Preliminary PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-100
V
Collector-Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current
IC -25 A
Base Current
Collector Power Dissipation (TC=25°C)
IB
Pc
-5 A
125 W
Junction Temperature
TJ 150 °C
Storage Temperature
TSTG
-55~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25°C)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Voltage
DC Current Gain (Note 1)
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Cut-Off Frequency
Output Capacitance
CLASSIFICATION OF hFE
SYMBOL
TEST CONDITIONS
ICBO VCB=100V
IEBO VEB=6V
V(BR)CEO IC=50mA
hFE VCE=4V, IC=12A
VCE(sat) IC=12A, IB=1.2A
VBE(ON) VCE=4V, IC=12A
fT VCE=12V, IE=-1A
Cob VCB=10V, IE=0A, f=1MHz
MIN TYP MAX UNIT
-10 µA
-10 µA
-100
V
40 120
-1.5 V
-1.8 V
20 MHz
200 pF
RANK
hFE1
R
40~80
O
60~120
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R214-021.a





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