MP2510

UNISONIC TECHNOLOGIES CO., LTD MP2510 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP TRANSISTOR  DESCRIPTION The UTC MP2510 is a PNP transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc. The UTC MP2510 is suitable for automobile power amplifiers, etc.  FEATURES * High DC current gain (Min = 40@VCE = 4V, IC = 12A) * High collector-emitter breakdown voltage (Min = -100V)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MP2510L-x-T3P-T MP2510G-x-T3P-T Pin Assignment: B: Base C: Collector E: Emitter Package TO-3P Pin Assignment 123 BCE Packing Tube www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R214-021.a MP2510 Preliminary PNP EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -6 V Collector Current IC -25 A Base Current Collector Power Dissipation (TC=25°C) IB Pc -5 A 125 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA =25°C) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitt...