B1144

Ordering number:2041A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1144/2SD1684 100V/1.5A Switching Applications Features · Adoption of FBET and MBIT processes. · High breakdown voltage. · Low saturation voltage. · Plastic-covered heat sink facilitating high-density mounting. Package Dimensions unit:mm 2042B [2SB1144/2SD1684] ( ) : 2SB1144 1 : Emitter 2 : Collector 3 : Base Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C Conditions SANYO : TO-126ML Ratings (–)120 (–)100 (–)6 (–)1.5 (–)2.0 1.5 10 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol Conditions ICBO IEBO hFE1 hFE2 fT VCB=(–)100V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)100mA VCE=(–)5V, IC=(–)1A VCE=(–)10V, IC=(–)50mA Output Capacitance Cob VCB=(–)10V, f=1MHz * : The 2SB1144/2SD1684 are classified by 100mA hFE as follows : 100 Q 200 140 S 280 Ratings min typ 100* 30 (100) 120 11(18) max (–)100 (–)100 400* Unit nA nA MHz MHz pF 200 T 400 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as...