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Description : INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1187 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.) @ IC= 6

D1187 Datasheet PDF

2SD1187





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