K216

2SK213, 2SK214, 2SK215, 2SK216 Silicon N Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 www.DataSheet4U.com Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode REJ03G0903-0200 (Previous: ADE-208-1241) Rev.2.00 Sep 07, 2005 Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) G D 123 S 1. Gate 2. Source (Flange) 3. Drain Rev.2.00 Sep 07, 2005 page 1 of 5 2SK213, 2SK214, 2SK215, 2SK216 Absolute Maximum Ratings Item Drain to source voltage 2SK213 2SK214 2SK215 2SK216 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation www.DataSheetC4Uha.cnonmel temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VDSX VGSS ID IDR Pch Pch*1 Tch Tstg Ratings 140 160 180 200 ±15 500 500 1.75 30 150 –45 to +150 (Ta = 25°C) Unit V V mA mA W W °C °C Electrical Characteristics Item Drain to source breakdown 2SK213 voltage 2SK214 2SK215 2SK216 Gate to source breakdown voltage Gate to source voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Note: 2. Pulse test (Ta = 25°C) Symbol Min Typ Max Unit Test conditions V(BR)DSX 140 160 — — — — V ID = 1 mA, VGS = –2 V V 180 — — V 200 — — V V(BR)GSS ±15 — — V IG = ±10 µA, VDS = 0 VGS(on) 0.2 — 1.5 V ID =...