Document
PJP10N65 / PJF10N65
650V N-Channel Enhancement Mode MOSFET FEATURES
• 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A
TO-220AB / ITO-220AB TO-220AB
• Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives
3 2
S
1D
G
ITO-220AB
1
2
3 D
S
G
MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
2 Drain
ORDERING INFORMATION
TYPE PJP10N65
MARKING P10N65
PJF10N65
F10N65
PACKAGE TO-220AB ITO-220AB
PACKING 50PCS/TUBE 50PCS/TUBE
1 Gate
3 Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Symbol PJP10N65 PJF10N65
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS +30
Continuous Drain Current
ID 10
10
Pulsed Drain Current 1)
Maximum Power Dissipation Derating Factor
TA= 2 5 OC
IDM PD
40
156 1.25
40
50 0.4
Op e ra ti ng Junc ti o n a nd S to r a g e Te mp e ra tur e Ra ng e
Avalanche Energy with Single Pulse IAS=10A, VDD=90V, L=13mΗ Junction-to-Case Thermal Resistance
TJ,TSTG E AS RθJC
-55 to +150 750
0.8 2.5
Junction-to Ambient Thermal Resistance Note : 1. Maximum DC current limited by the package
RθJA
62.5
100
Uni ts V V A A W OC mJ
OC /W OC /W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-DEC.25.2009
PAGE . 1
PJP10N65 / PJF10N65
ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted )
Parameter
Static
Symbol
Te s t C o nd i ti o n
Drain-Source Breakdown Voltag e
Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain C urre nt Gate Body Leakage
Dynamic
B V DSS V GS(th) R D S ( o n) I DSS I GSS
VGS=0V, I D=250uA VDS=VGS, I D=250uA
VGS= 10V, I D= 5.0A VDS=650V, VGS=0V VGS=+30V, VDS=0V
To ta l Ga te C ha rg e Gate-Source Charge Gate-Drain Charge Turn-On D e la y Ti me Turn-On Ri s e Ti me Turn-Off D e la y Ti me Turn-Off F a ll Ti me Input Capacitance Output Capacitance Reverse Tra nsfer C a p a c i ta nc e
Source-Drain Diode
Qg Q gs Q gd t d(on) tr t d(off) tf C iss C oss C rss
V DS=520V, ID=10A , V GS= 1 0 V
VDD=325V, ID =10A V GS=1 0 V, RG=25Ω
VDS=25V, VGS=0V f=1.0MHZ
Max. Diode Forward Current
IS
-
Max.Pulsed Source Current
I SM
-
Diode Forward Voltage
V SD
IS=10A , V GS=0V
Re ve rse Re co ve ry Ti me Reverse Recovery Charge
t rr Q rr
V GS=0V, IF=10A d i /d t=1 0 0 A /us
NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
Mi n. Typ . Ma x. Uni ts
650 -
-V
2.0 - 4.0 V
- 0.85 1.0 Ω
- - 10 uA - - +100 nΑ
-
38.6
52
- 8.4 - nC
- 9.8 -
- 14.8 22
- 22.6 36
ns
-
48.2
90
-
26.8
42
- 1450 2020
- 120 165 p F
- 12 16
- - 10 A - - 40 A - - 1.4 V - 450 - ns - 4.2 - uC
STAD-DEC.25.2009
PAGE . 2
PJP10N65 / PJF10N65
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
ID - Drain-to-Source Current (A)
20 18 16 14 12 10
8 6 4 2 0
0
VGS= 20V~ 6.0V
5.0V
5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
ID - Drain Source Current (A)
100
VDS =50V
10 TJ = 125oC
1
0.1
25oC -55oC
0.01 1
2345678 VGS - Gate-to-Source Voltage (V)
Fig.2 Transfer Characteristric
RDS(ON) - On Resistance(Ω)
2
1.6
1.2 VGS=10V
0.8 VGS = 20V
0.4
0 0 4 8 12 16 20 ID - Drain Current (A)
Fig.3 On Resistance vs Drain Current
RDS(ON) - On Resistance(Ω)
4 3.5
3 2.5
2 1.5
1 0.5
0 3
ID =5.0A
TJ =25oC
456789 VGS - Gate-to-Source Voltage (V)
10
Fig.4 On Resistance vs Gate to Source Voltage
RDS(ON) - On-Resistance(Normalized)
2.5 2.3 VGS =10 V 2.1 ID =5.0A 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5
-50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC)
Fig.5 On Resistance vs Junction Temperature
STAD-DEC.25.2009
C - Capacitance (pF)
2500 2000 1500
Ciss
f = 1MHz VGS = 0V
1000
500
Coss Crss
0
0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V)
Fig.6 Capacitance
PAGE. 3
PJP10N65 / PJF10N65
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
VGS - Gate-to-Source Voltage (V)
12 ID =10A
10
VDS=520V
8 VDS=325V
VDS=130V 6
4
2
0 0 4 8 12 16 20 24 28 32 36 40 Qg - Gate Charge (nC)
Fig. 7 Gate Charge Waveform
BVDSS - Breakdown Voltage(Normalized)
1.2 ID = 250µA
1.1
1
0.9
0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC)
Fig.9 Breakdown Voltage vs Junction Temperature
IS - Source Current (A)
100
VGS = 0V
10 TJ = 125oC
1
0.1
25oC -55oC
0.01 0.2
0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V)
1.4
Fig.8 Source-Drain Diode Forward Voltage
STAD-DEC.25.2009
PAGE. 4
PJP10N65 / PJF10N65
LEGALSTATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any partic.