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F10N65 Dataheets PDF



Part Number F10N65
Manufacturers Pan Jit International
Logo Pan Jit International
Description 650V N-Channel Enhancement Mode MOSFET
Datasheet F10N65 DatasheetF10N65 Datasheet (PDF)

PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A TO-220AB / ITO-220AB TO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives 3 2 S 1D G ITO-220AB 1 2 3 D S G MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MI.

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PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A TO-220AB / ITO-220AB TO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives 3 2 S 1D G ITO-220AB 1 2 3 D S G MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM 2 Drain ORDERING INFORMATION TYPE PJP10N65 MARKING P10N65 PJF10N65 F10N65 PACKAGE TO-220AB ITO-220AB PACKING 50PCS/TUBE 50PCS/TUBE 1 Gate 3 Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER Symbol PJP10N65 PJF10N65 Drain-Source Voltage VDS 650 Gate-Source Voltage VGS +30 Continuous Drain Current ID 10 10 Pulsed Drain Current 1) Maximum Power Dissipation Derating Factor TA= 2 5 OC IDM PD 40 156 1.25 40 50 0.4 Op e ra ti ng Junc ti o n a nd S to r a g e Te mp e ra tur e Ra ng e Avalanche Energy with Single Pulse IAS=10A, VDD=90V, L=13mΗ Junction-to-Case Thermal Resistance TJ,TSTG E AS RθJC -55 to +150 750 0.8 2.5 Junction-to Ambient Thermal Resistance Note : 1. Maximum DC current limited by the package RθJA 62.5 100 Uni ts V V A A W OC mJ OC /W OC /W PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-DEC.25.2009 PAGE . 1 PJP10N65 / PJF10N65 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) Parameter Static Symbol Te s t C o nd i ti o n Drain-Source Breakdown Voltag e Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain C urre nt Gate Body Leakage Dynamic B V DSS V GS(th) R D S ( o n) I DSS I GSS VGS=0V, I D=250uA VDS=VGS, I D=250uA VGS= 10V, I D= 5.0A VDS=650V, VGS=0V VGS=+30V, VDS=0V To ta l Ga te C ha rg e Gate-Source Charge Gate-Drain Charge Turn-On D e la y Ti me Turn-On Ri s e Ti me Turn-Off D e la y Ti me Turn-Off F a ll Ti me Input Capacitance Output Capacitance Reverse Tra nsfer C a p a c i ta nc e Source-Drain Diode Qg Q gs Q gd t d(on) tr t d(off) tf C iss C oss C rss V DS=520V, ID=10A , V GS= 1 0 V VDD=325V, ID =10A V GS=1 0 V, RG=25Ω VDS=25V, VGS=0V f=1.0MHZ Max. Diode Forward Current IS - Max.Pulsed Source Current I SM - Diode Forward Voltage V SD IS=10A , V GS=0V Re ve rse Re co ve ry Ti me Reverse Recovery Charge t rr Q rr V GS=0V, IF=10A d i /d t=1 0 0 A /us NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%. Mi n. Typ . Ma x. Uni ts 650 - -V 2.0 - 4.0 V - 0.85 1.0 Ω - - 10 uA - - +100 nΑ - 38.6 52 - 8.4 - nC - 9.8 - - 14.8 22 - 22.6 36 ns - 48.2 90 - 26.8 42 - 1450 2020 - 120 165 p F - 12 16 - - 10 A - - 40 A - - 1.4 V - 450 - ns - 4.2 - uC STAD-DEC.25.2009 PAGE . 2 PJP10N65 / PJF10N65 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) ID - Drain-to-Source Current (A) 20 18 16 14 12 10 8 6 4 2 0 0 VGS= 20V~ 6.0V 5.0V 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Fig.1 Output Characteristric ID - Drain Source Current (A) 100 VDS =50V 10 TJ = 125oC 1 0.1 25oC -55oC 0.01 1 2345678 VGS - Gate-to-Source Voltage (V) Fig.2 Transfer Characteristric RDS(ON) - On Resistance(Ω) 2 1.6 1.2 VGS=10V 0.8 VGS = 20V 0.4 0 0 4 8 12 16 20 ID - Drain Current (A) Fig.3 On Resistance vs Drain Current RDS(ON) - On Resistance(Ω) 4 3.5 3 2.5 2 1.5 1 0.5 0 3 ID =5.0A TJ =25oC 456789 VGS - Gate-to-Source Voltage (V) 10 Fig.4 On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance(Normalized) 2.5 2.3 VGS =10 V 2.1 ID =5.0A 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.5 On Resistance vs Junction Temperature STAD-DEC.25.2009 C - Capacitance (pF) 2500 2000 1500 Ciss f = 1MHz VGS = 0V 1000 500 Coss Crss 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Fig.6 Capacitance PAGE. 3 PJP10N65 / PJF10N65 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) VGS - Gate-to-Source Voltage (V) 12 ID =10A 10 VDS=520V 8 VDS=325V VDS=130V 6 4 2 0 0 4 8 12 16 20 24 28 32 36 40 Qg - Gate Charge (nC) Fig. 7 Gate Charge Waveform BVDSS - Breakdown Voltage(Normalized) 1.2 ID = 250µA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature IS - Source Current (A) 100 VGS = 0V 10 TJ = 125oC 1 0.1 25oC -55oC 0.01 0.2 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) 1.4 Fig.8 Source-Drain Diode Forward Voltage STAD-DEC.25.2009 PAGE. 4 PJP10N65 / PJF10N65 LEGALSTATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any partic.


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