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F10N65

Pan Jit International

650V N-Channel Enhancement Mode MOSFET


Description
PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET FEATURES 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A TO-220AB / ITO-220AB TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Direct...



Pan Jit International

F10N65

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