650V N-Channel Enhancement Mode MOSFET
PJP10N65 / PJF10N65
650V N-Channel Enhancement Mode MOSFET FEATURES
• 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A
TO-220...
Description
PJP10N65 / PJF10N65
650V N-Channel Enhancement Mode MOSFET FEATURES
10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A
TO-220AB / ITO-220AB TO-220AB
Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives
3 2
S
1D
G
ITO-220AB
1
2
3 D
S
G
MECHANICAL DATA Case: TO-220AB / ITO-220AB Molded Plastic Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
2 Drain
ORDERING INFORMATION
TYPE PJP10N65
MARKING P10N65
PJF10N65
F10N65
PACKAGE TO-220AB ITO-220AB
PACKING 50PCS/TUBE 50PCS/TUBE
1 Gate
3 Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Symbol PJP10N65 PJF10N65
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS +30
Continuous Drain Current
ID 10
10
Pulsed Drain Current 1)
Maximum Power Dissipation Derating Factor
TA= 2 5 OC
IDM PD
40
156 1.25
40
50 0.4
Op e ra ti ng Junc ti o n a nd S to r a g e Te mp e ra tur e Ra ng e
Avalanche Energy with Single Pulse IAS=10A, VDD=90V, L=13mΗ Junction-to-Case Thermal Resistance
TJ,TSTG E AS RθJC
-55 to +150 750
0.8 2.5
Junction-to Ambient Thermal Resistance Note : 1. Maximum DC current limited by the package
RθJA
62.5
100
Uni ts V V A A W OC mJ
OC /W OC /W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-DEC.25.2009
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