1Gb SDRAM
DDR3(L) 1Gb SDRAM
NT5CB(C)128M8FN / NT5CB(C)64M16FP
Nanya Technology Corp.
NT5CB(C)128M8FN / NT5CB(C)64M16FP
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Description
DDR3(L) 1Gb SDRAM
NT5CB(C)128M8FN / NT5CB(C)64M16FP
Nanya Technology Corp.
NT5CB(C)128M8FN / NT5CB(C)64M16FP
Commercial, Industrial and Automotive DDR3(L) 1Gb SDRAM
Features
JEDEC DDR3 Compliant - 8n Prefetch Architecture - Differential Clock(CK/) and Data Strobe(DQS/) - Double-data rate on DQs, DQS and DM
Data Integrity - Auto Self Refresh (ASR) by DRAM built-in TS - Auto Refresh and Self Refresh Modes
Power Saving Mode - Partial Array Self Refresh (PASR)1 - Power Down Mode
Signal Integrity - Configurable DS for system compatibility
- Configurable On-Die Termination
- ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm ± 1%)
Signal Synchronization - Write Leveling via MR settings 7 - Read Leveling via MPR
Interface and Power Supply
- SSTL_15 for DDR3:VDD/VDDQ=1.5V(±0.075V) - SSTL_1354 for DDR3L:VDD/VDDQ=1.35V(-0.067/+0.1V)
Speed Grade (CL-TRCD-TRP) 2,3 - 2133 Mbps / 14-14-14 - 1866 Mbps / 13-13-13 - 1600 Mbps / 10-10-10,11-11-11
Options
Temperature Range (Tc) 5 - Commercial Grade = 0℃~95℃ - Industrial Grade (-I) = -40℃~95℃ - Automotive Grade 2 (-H) = -40℃~105℃ - Automotive Grade 3 (-A) = -40℃~95℃
Programmable Functions
CAS Latency (5/6/7/8/9/10/11/12/13/14) CAS Write Latency (5/6/7/8/9/10) Additive Latency (0/CL-1/CL-2) Write Recovery Time (5/6/7/8/10/12/14/16) Burst Type (Sequential/Interleaved) Burst Length (BL8/BC4/BC4 or 8 on the fly)
Self RefreshTemperature Range(Normal/Extended) Output Driver Impedanc...
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