BUK752R7-30B

BUK752R7-30B N-channel TrenchMOS standard level FET Rev. 04 — 7 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for standard level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V loads „ Automotive systems „ General purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage - - 30 V ID drain current VGS = 10 V; Tmb = 25 °C; [1] - - 75 A see Figure 1; see Figure 3 Ptot total power Tmb = 25 °C; see Figure 2 dissipation - - 300 W Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; - 2.3 2.7 mΩ see Figure 11; see Figure 12 Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics ID = 75 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped - - 2.3 J QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 24 V; - 29 - nC Tj = 25 °C; see Figure 13 [1] Continuous current is li...