A1607

Ordering number:EN2479A Features · Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Package Dimensions unit:mm 2018A [2SA1607/2SC4168] ( ) : 2SA1607 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol Conditions ICBO IEBO hFE VCB=(–)30V, IE=0 VEB=(–)4V, IC=0 VCE=(–)1V, IC=(–)10mA Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)10mA C : Collector B : Base E : Emitter SANYO : CP Ratings (–)40 (–)20 (–)5 (–)150 (–)300 (–)30 200 150 –55 to +150 Unit V V V mA mA mA mW ˚C ˚C Ratings min typ 60* 700 (400) max (–)0.1 (–)0.1 270* (180) Unit µA µA MHz MHz Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before ...