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Si7252DP Dataheets PDF



Part Number Si7252DP
Manufacturers Vishay
Logo Vishay
Description Dual N-Channel 100 V (D-S) MOSFET
Datasheet Si7252DP DatasheetSi7252DP Datasheet (PDF)

New Product Si7252DP Vishay Siliconix Dual N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.017 at VGS = 10 V 100 0.018 at VGS = 7.5 V 0.020 at VGS = 6 V ID (A)a 36.7 35.7 33.9 Qg (Typ.) 12.2 nC PowerPAK SO-8 6.15 mm D1 8 D1 7 D2 6 D2 5 S1 1 G1 2 5.15 mm S2 3 G2 4 Bottom View Ordering Information: Si7252DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of c.

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New Product Si7252DP Vishay Siliconix Dual N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.017 at VGS = 10 V 100 0.018 at VGS = 7.5 V 0.020 at VGS = 6 V ID (A)a 36.7 35.7 33.9 Qg (Typ.) 12.2 nC PowerPAK SO-8 6.15 mm D1 8 D1 7 D2 6 D2 5 S1 1 G1 2 5.15 mm S2 3 G2 4 Bottom View Ordering Information: Si7252DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Primary Side Switching • Synchronous Rectification • DC/AC Inverters D1 D2 G1 N-Channel MOSFET S1 G2 N-Channel MOSFET S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 85 °C TA = 25 °C TA = 85 °C ID Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 85 °C TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e IDM IS IAS EAS PD TJ, Tstg Limit 100 ± 20 36.7 29.2 10.1b, c 8b, c 80 38 2.9b, c 20 20 46 29 3.5b, c 2.2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t  10 s Steady State RthJA RthJC 26 2.2 35 °C/W 2.7 Notes: a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 85 °C/W. Document Number: 62634 For technical questions, contact: [email protected] www.vishay.com S12-2186-Rev. A, 10-Sep-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7252DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage VDS/TJ VGS(th)/TJ VGS(th) ID = 250 µA VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = 100 V, VGS = 0 V VDS = .


CS16210 Si7252DP C1942


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