New Product
Si7252DP
Vishay Siliconix
Dual N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.017 at VGS = 10 V
100 0.018 at VGS = 7.5 V
0.020 at VGS = 6 V
ID (A)a 36.7 35.7 33.9
Qg (Typ.) 12.2 nC
PowerPAK SO-8
6.15 mm
D1 8
D1
7
D2
6 D2 5
S1 1
G1 2
5.15 mm
S2 3 G2
4
Bottom View
Ordering Information: Si7252DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS • Primary Side Switching • Synchronous Rectification • DC/AC Inverters
D1
D2
G1 N-Channel MOSFET
S1
G2 N-Channel MOSFET
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 85 °C TA = 25 °C TA = 85 °C
ID
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current Single Pulse Avalanche Energy
TC = 25 °C TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 85 °C TA = 25 °C
TA = 85 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
IDM IS IAS EAS
PD
TJ, Tstg
Limit
100 ± 20 36.7 29.2 10.1b, c 8b, c 80 38 2.9b, c 20 20
46 29 3.5b, c 2.2b, c - 55 to 150 260
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain)
t 10 s Steady State
RthJA RthJC
26 2.2
35 °C/W
2.7
Notes:
a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 85 °C/W.
Document Number: 62634
For technical questions, contact:
[email protected]
www.vishay.com
S12-2186-Rev. A, 10-Sep-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7252DP
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage
VDS/TJ VGS(th)/TJ
VGS(th)
ID = 250 µA VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current On-State Drain Currenta
IDSS ID(on)
VDS = 100 V, VGS = 0 V VDS = .