C1942

SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·For TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Product Specification 2SC1942 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage Open emitter VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector IC Collector current PT Total power dissipation TC=25 Tj Junction temperature Tstg Storage temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C Thermal resistance from junction to case VALUE 1500 800 6 3 50 150 -65~150 UNIT V V V A W VALUE 2.5 UNIT /W SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.8A ICBO Collector cut-off current VCB=600V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=1 A ; VCE=5V Product Specification 2SC1942 MIN TYP. MAX UNIT 800 V 6V 5.0 V 1.5 V 10 µA 10 µA 8 40 2 SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com ...