MRF7S38075HSR3

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. Typical WiMAX Performance: VDD = 30 Volts, IDQ 12 Watts Avg., f = 3400 and 3600 MHz, 802.16d, MHz Channel Bandwidth, Input Signal PAR = 9.5 [email protected]/,4%P, 4oPubtro=ubrsatbsi,lit7y on CCDF. Power Gain — 14 dB Drain Efficiency — 14% Device Output Signal PAR — 8.7 dB @ 0.01% Probability on CCDF ACPR @ 5.25 MHz Offset — - 49 dBc in 0.5 MHz Channel Bandwidth Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 75 Watts CW Peak Tuned Output Power Pout @ 1 dB Compression Point w 75 Watts CW Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate - Source Voltage Range for Improved Class C Operation RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRF7S38075H Rev. 0, 8/2007 MRF7S38075HR3 MRF7S38075HSR3 3400 - 3600 MHz, 12 W AVG., 30 V WiMAX LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF7S38075HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF7S38075HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage T...