B710

Transistors 2SB0710 (2SB710), 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Unit: mm Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) ■ Features Large collector current IC Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) 2SB0710 VCBO 2SB0710A −30 −60 Collector-emitter voltage 2SB0710 VCEO (Base open) 2SB0710A −25 −50 Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature VEBO IC ICP PC Tj Tstg −5 − 0.5 −1 200 150 −55 to +150 ■ Electrical Characteristics Ta = 25°C ± 3°C Unit V V V A A mW °C °C 0.40+–00..0150 3 0.16+–00..0160 0.4±0.2 1.50–+00..0255 2.8–+00..32 5˚ (0.65) 0 to 0.1 1.1–+00..12 1.1–+00..13 12 (0.95) (0.95) 1.9±0.1 2.90+–00..0250 10˚ 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: 2SB0710: C 2SB0710A: D Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SB0710 2SB0710A 2SB0710 2SB0710A VCBO VCEO IC = −10 µA, IE = 0 IC = −10 mA, IB = 0 −30 −60 −25 −50 V V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5 V Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA Forward curr...