TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2551
2SC2551
Hight Voltage Control Applications Plasma ...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process)
2SC2551
2SC2551
Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
Industrial Applications Unit: mm
High voltage: VCBO = 300 V, VCEO = 300 V Low saturation voltage: VCE (sat) = 0.5 V (max) Small collector output capacitance: Cob = 3 pF (typ.) Complementary to 2SA1091.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
300 300
6 100 20 400 150 −55~150
V V V mA mA mW °C °C
JEDEC JEITA TOSHIBA
TO-92 SC-43 2-5F1B
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.21 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
...