FDN359BN

FDN359BN January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features 2.7 A, 30 V. RDS(ON)= 0.046 Ω @ VGS = 10 V RDS(ON)= 0.060 Ω @ VGS = 4.5 V Very fast switching speed. Low gate charge (5nC typical) High performance version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. DD SuperSOTTM-3 G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous (Note 1a) – Pulsed PD Maximum Power Dissipation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size 359B FDN359BN 7’’ GS Ratings 30 ±20 2.7 15 0.5 0.46 −55 to +150 250 75 Tape width 8mm Units V V A W °C °C/W °C/W Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDN359BN Rev A(W) FDN359BN Electrical Characte...