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SBD10C150F

Silan Microelectronics

150V SCHOTTKY RECTIFIER

10A, 150V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C150T/F is schottky rectifier fabricated in silicon epitaxial plan...


Silan Microelectronics

SBD10C150F

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Description
10A, 150V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C150T/F is schottky rectifier fabricated in silicon epitaxial planar technology. Typical applications are in switching power supplies and protection circuit etc. FEATURES ∗ Guard ring for Stress Protection ∗ High Surge Capacity ∗ Low power loss , high efficiency ∗ Low forward voltage drop SBD10C150T/F ORDERING SPECIFICATIONS Part No. SBD10C150T SBD10C150F Package TO-220-3L TO-220F-3L Marking SBD10C150T SBD10C150F Material Pb free Pb free Packing Tube Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge [email protected] Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Value 150 10 120 150 -40~150 Unit V A A °C °C THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction-to-Case Symbol RθJC Value 2.0 Unit °C/W ELECTRICAL CHARACTERISTICS Parameter Forward Voltage Symbol VF Reverse Current IR Test conditions IF=5A (TC=25°C) IF=5A(TC=125°C) VR=1500V(TC=25°C) VR=1500V(TC=125°C) Min. ----- Max. 0.9 0.75 50 25 Unit V V μA mA Page 1 www.junyi-ic.com TYPICAL CHARACTERISTICS SBD10C150T/F Page 2 www.junyi-ic.com PACKAGE OUTLINE TO-220-3L SBD10C150T/F UNIT: mm TO-220F-3L UNIT: mm Page 3 www.junyi-ic.com SBD10C150T/F Disclaimer: Silan reserves the right to make changes to the information herein for the improvement of the design and performance withou...




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