Document
PD -93961
IRG4BH20K-L
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V
• Combines low conduction losses with high switching speed
• Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
• Industry standard TO-262 package
Benefits
• As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT
• Latest generation 4 IGBT's offer highest power density motor controls possible
C
G E
n-channel
Short Circuit Rated UltraFast IGBT
VCES = 1200V VCE(on) typ. = 3.17V
@VGE = 15V, IC = 5.0A
TO-262
Absolute Maximum Ratings
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range
Thermal Resistance
RθJC RθCS RθJA Wt
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Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Max. 1200 11 5.0 22 22 10 ±20 130 60 24 -55 to +150
Units V
A
µs V mJ W
°C
Typ. ––– 0.24 ––– 6 (0.21)
Max. 2.1 ––– 40 –––
Units
°C/W
g (oz)
1
8/17/00
IRG4BH20K-L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 —
V(BR)ECS
Emitter-to-Collector Breakdown Voltage 18 —
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.13
— 3.17
— — — 4.3
V V V/°C
VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0A VGE = 0V, IC = 2.5mA IC = 5.0A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
— 4.04 — V IC = 11A
See Fig.2, 5
— 2.84 —
IC = 5.0A , TJ = 150°C
3.5 — 6.5
VCE = VGE, IC = 250µA
— -10 — mV/°C VCE = VGE, IC = 1mA
2.3 3.5 — S VCE = 100 V, IC = 5.0A
— — 250 µA VGE = 0V, VCE = 1200V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 1200V, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
— 28 43
IC = 5.0A
Qge Gate - Emitter Charge (turn-on)
— 4.4 6.6 nC VCC = 400V
See Fig.8
Qgc
Gate - Collector Charge (turn-on)
— 12 18
VGE = 15V
td(on)
Turn-On Delay Time
— 23 —
tr td(off) tf
Rise Time Turn-Off Delay Time Fall Time
— 26 — ns TJ = 25°C
— 93 140
IC =5.0A, VCC = 960V
— 270 400
VGE = 15V, RG = 50Ω
Eon Turn-On Switching Loss
— 0.45 —
Energy losses include "tail"
Eoff Turn-Off Switching Loss
— 0.44 — mJ See Fig. 9,10,14
Ets Total Switching Loss
— 0.89 1.2
tsc Short Circuit Withstand Time
10 — —
µs VCC = 720V, TJ = 125°C VGE = 15V, RG = 50Ω
td(on)
Turn-On Delay Time
— 23 —
TJ = 150°C,
tr td(off)
Rise Time Turn-Off Delay Time
— 28 — — 100 —
ns
IC = 5.0A, VCC = 960V VGE = 15V, RG = 50Ω
tf Fall Time
— 620 —
Energy losses include "tail"
Ets Total Switching Loss
— 1.7 — mJ See Fig. 10,11,14
LE Internal Emitter Inductance
— 7.5 — nH Measured 5mm from package
Cies Input Capacitance
— 435 —
VGE = 0V
Coes Output Capacitance
— 44 — pF VCC = 30V
See Fig. 7
Cres Reverse Transfer Capacitance
— 8.3 —
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b )
Repetitive rating; pulse width limited by maximum junction temperature.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG =50Ω, (See fig. 13a)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
2 www.irf.com
Load Current ( A )
IRG4BH20K-L
16
12
Square wave: 8 60% of rated
voltage
For both:
Duty cycle: 50% TJ = 125˚ C Tsink = 90˚ C Gate drive as specified Power Dissipation = 15W
Triangular wave:
Clamp voltage: 80% of rated
4
Ideal diodes
0 0.1
1 10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental)
)
100
100 100
I C, Collector-to-Emitter Current (A)
I C, Collector-to-Emitter Current (A)
10 TJ = 150 °C
1 TJ = 25 °C
0.1 1
VGE = 15V 20µs PULSE WIDTH
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics www.irf.com
10 TJ = 150 °C
TJ = 25 °C VCC = 50V 5µs PULSE WIDTH
1 6 8 10 12 14
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics 3
IRG4BH20K-L
Maximum DC.