DatasheetsPDF.com

IRG4BH20K-L Dataheets PDF



Part Number IRG4BH20K-L
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRG4BH20K-L DatasheetIRG4BH20K-L Datasheet (PDF)

PD -93961 IRG4BH20K-L INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations • Industry standard TO-262 package Benefits • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noi.

  IRG4BH20K-L   IRG4BH20K-L



Document
PD -93961 IRG4BH20K-L INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations • Industry standard TO-262 package Benefits • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBT's offer highest power density motor controls possible C G E n-channel Short Circuit Rated UltraFast IGBT VCES = 1200V VCE(on) typ. = 3.17V @VGE = 15V, IC = 5.0A TO-262 Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance RθJC RθCS RθJA Wt www.irf.com Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Max. 1200 11 5.0 22 22 10 ±20 130 60 24 -55 to +150 Units V A µs V mJ W °C Typ. ––– 0.24 ––– 6 (0.21) Max. 2.1 ––– 40 ––– Units °C/W g (oz) 1 8/17/00 IRG4BH20K-L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — V(BR)ECS Emitter-to-Collector Breakdown Voltage „ 18 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.13 — 3.17 — — — 4.3 V V V/°C VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0A VGE = 0V, IC = 2.5mA IC = 5.0A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage VGE(th) Gate Threshold Voltage ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage gfe Forward Transconductance … ICES Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current — 4.04 — V IC = 11A See Fig.2, 5 — 2.84 — IC = 5.0A , TJ = 150°C 3.5 — 6.5 VCE = VGE, IC = 250µA — -10 — mV/°C VCE = VGE, IC = 1mA 2.3 3.5 — S VCE = 100 V, IC = 5.0A — — 250 µA VGE = 0V, VCE = 1200V — — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C — — 1000 VGE = 0V, VCE = 1200V, TJ = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 28 43 IC = 5.0A Qge Gate - Emitter Charge (turn-on) — 4.4 6.6 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) — 12 18 VGE = 15V td(on) Turn-On Delay Time — 23 — tr td(off) tf Rise Time Turn-Off Delay Time Fall Time — 26 — ns TJ = 25°C — 93 140 IC =5.0A, VCC = 960V — 270 400 VGE = 15V, RG = 50Ω Eon Turn-On Switching Loss — 0.45 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 0.44 — mJ See Fig. 9,10,14 Ets Total Switching Loss — 0.89 1.2 tsc Short Circuit Withstand Time 10 — — µs VCC = 720V, TJ = 125°C VGE = 15V, RG = 50Ω td(on) Turn-On Delay Time — 23 — TJ = 150°C, tr td(off) Rise Time Turn-Off Delay Time — 28 — — 100 — ns IC = 5.0A, VCC = 960V VGE = 15V, RG = 50Ω tf Fall Time — 620 — Energy losses include "tail" Ets Total Switching Loss — 1.7 — mJ See Fig. 10,11,14 LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package Cies Input Capacitance — 435 — VGE = 0V Coes Output Capacitance — 44 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 8.3 — ƒ = 1.0MHz Notes:  Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) ƒ Repetitive rating; pulse width limited by maximum junction temperature. ‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG =50Ω, (See fig. 13a) „ Pulse width ≤ 80µs; duty factor ≤ 0.1%. … Pulse width 5.0µs, single shot. * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com Load Current ( A ) IRG4BH20K-L 16 12 Square wave: 8 60% of rated voltage For both: Duty cycle: 50% TJ = 125˚ C Tsink = 90˚ C Gate drive as specified Power Dissipation = 15W Triangular wave: Clamp voltage: 80% of rated 4 Ideal diodes 0 0.1 1 10 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) ) 100 100 100 I C, Collector-to-Emitter Current (A) I C, Collector-to-Emitter Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 1 VGE = 15V 20µs PULSE WIDTH 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com 10 TJ = 150 °C TJ = 25 °C VCC = 50V 5µs PULSE WIDTH 1 6 8 10 12 14 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4BH20K-L Maximum DC.


IRG4BH20K-SPbF IRG4BH20K-L CPH6316


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)