CPH6316

Ordering number : ENN7026 CPH6316 P-Channel Silicon MOSFET CPH6316 High-Speed Switching Applications Features Low ON-resistance. High-speed switching. 4V drive. Package Dimensions unit : mm 2151A [CPH6316] 2.9 0.15 6 54 0.05 0.2 0.6 1.6 0.6 2.8 Specifications Absolute Maximum Ratings at Ta=25°C 12 3 0.95 0.4 0.7 0.2 0.9 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Ratings --30 ±20 --3 --12 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : JS V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 ID=--1mA, VGS=0 VDS=--30V, VGS=0 VGS=±16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--1A ID=--1A, VGS=--10V ID=--0.5A, VGS=--4V min --30 --1.2 1.4 Ratings typ max Unit V --1 µA ±10 µA --2.6 V 2S 115 150 mΩ 210 295 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabilit...