MJE13009G

MJE13009G SWITCHMODE Series NPN Silicon Power Transistors The MJE13009G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Features VCEO(sus) 400 V and 300 V Reverse Bias SOA with Inductive Loads @ TC = 100_C Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C tc @ 8 A, 100_C is 120 ns (Typ) 700 V Blocking Capability SOA and Switching Applications Information These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous − Peak (Note 1) Base Current − Continuous − Peak (Note 1) Emitter Current − Continuous − Peak (Note 1) Total Device Dissipation Derate above 25°C @ TA = 25_C Total Device Dissipation @ TC = 25_C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO(sus) VCEV VEBO IC ICM IB IBM IE IEM PD PD TJ, Tstg Value 400 700 9 12 24 6 12 18 36 2 0.016 100 0.8 −65 to +150 Unit Vdc Vdc Vdc Adc Adc Adc W W/_C W W/_C _C THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds RqJA RqJC TL 62.5 _C/W 1.25 _C/W 275 _C Stresses...