FX851

Ordering number:EN4891 FX851 MOSFET:P-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features · Composite type composed of a low ON-resistance Pchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward -voltage Schottky barrier diode. Facilitates highdensity mounting. · The FX851 is formed with 2 chips, one being equivalent to the 2SJ187 and the other the SB07-03P, placed in one package. Package Dimensions unit:mm 2119 [FX851] Electrical Connection 1:Gate 2:Source 3:No connection 4:Anode 5:Cathode 6:Drain (Top view) 1:Gate 2:Source 3:No connection 4:Anode 5:Cathode 6:Drain SANYO:XP6 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 35 700 5 –55 to +125 –55 to +150 V V mA A ˚C ˚C VDSS VGSS ID IDP PD PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C Mounted on ceramic board (750mm2×0.8mm) –30 ±15 –1 –4 6 1.5 150 –55 to +150 V V A A W W ˚C ˚C Symbol Conditions Ratings Unit · Marking:851 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., ...