FX853

Ordering number:EN4893 FX853 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features · Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward -voltage Schottky barrier diode. Facilitates highdensity mounting. · The FX853 is formed with 2 chips, one being equivalent to the 2SK1467 and the other the SB05-05P, placed in one package. Package Dimensions unit:mm 2119 [FX853] Electrical Connection 1:Gate 2:Source 3:No connection 4:Anode 5:Cathode 6:Drain (Top view) 1:Gate 2:Source 3:No connection 4:Anode 5:Cathode 6:Drain SANYO:XP6 (Bottom view) Specifications Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Absolute Maximum Ratings at Ta = 25˚C Symbol VDSS VGSS ID IDP PD PD Tch Tstg VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle PW≤10µs, duty cycle≤1% Tc=25˚C Mounted on ceramic board (750mm2×0.8mm) Conditions Ratings 30 ±15 2 8 6 1.5 150 –55 to +150 50 55 500 5 –55 to +125 –55 to +150 Unit V V A A W W ˚C ˚C V V mA A ˚C ˚C Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature · Marking:853 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1...