K2405

Ordering number : EN8603 2SK2405 SANYO Semiconductors DATA SHEET 2SK2405 Features Built-in FRD. 10V drive. N-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Tc=25°C Electrical Characteristics at Ta=25°C Conditions Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on) Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=450V, VGS=0V VGS= ±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings 450 ±30 10 40 1.65 70 150 --55 to +150 Unit V V A A W W °C °C min 450 2.0 3 Ratings typ max Unit V 1.0 mA ±100 nA 3.0 V 6S 0.55 0.75 Ω 1500 pF 220 pF 75 pF Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein sh...