PSS9013H

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS9013 series 20 V NPN general purpose transistors Product specification Supersedes data of 2003 May 15 2004 Aug 10 Philips Semiconductors 20 V NPN general purpose transistors Product specification PSS9013 series FEATURES High power dissipation: 710 mW Low collector capacitance Low collector-emitter saturation voltage High current capability. APPLICATIONS General purpose switching and amplification. DESCRIPTION NPN general purpose transistor in a SOT54 (TO-92) leaded plastic package. PNP complement: PSS9012 series. MARKING TYPE NUMBER PSS9013G PSS9013H MARKING CODE S9013G S9013H QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM collector-emitter voltage collector current (DC) peak collector current MAX. UNIT 20 V 500 mA 1A PINNING PIN 1 2 3 collector base emitter DESCRIPTION handbook, halfpage1 2 3 1 2 MAM279 3 Fig.1 Simplified outline (SOT54; TO-92) and symbol. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C; note 1 MIN. − − − − − − − −65 − −65 MAX. 40 20 5 500 1 100 710 +150 150 +150 Note 1. Device mounte...