PZD502CYB

NIKO-SEM N-Channel Logic Level Enhancement PZD502CYB Mode Field Effect Transistor SOT-523 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 450mΩ ID 0.7A ESD Protected Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM PD Tj, Tstg 1. GATE 2. DRAIN 3. SOURCE LIMITS 20 ±8 0.7 0.6 2 0.4 0.2 -55 to 150 UNITS V V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RθJA 280 °C/W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS RDS(ON) gfs STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±8V VDS = 16V, VGS = 0V VDS = 10V, VGS = 0V, TJ = 55 °C VGS = 1.8V, ID = 0.35A VGS = 2.5V, ID = 0.5A VGS = 4.5V, ID = 0.6A ...