Document
9A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD9N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
∗ 9A,650V,RDS(on)(typ.)=0.98Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
SVD9N65T/F
ORDERING SPECIFICATIONS
Part No. SVD9N65T SVD9N65F
Package TO-220-3L TO-220F-3L
Marking SVD9N65T SVD9N65F
Material Pb free Pb free
Packing Tube Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:0.3 2010.10.11 Page 1 of 8
SVD9N65T/F
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Pulsed Current Power Dissipation(TC=25°C)
-Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature
Symbol VDS VGS ID IDM
PD
EAS TJ Tstg
SVD9N65T
SVD9N65F
650
±30
9
36
148 48
1.18 0.38
672
150
-55~+150
Unit V V A A W
W/°C mJ °C °C
THERMAL CHARACTERISTICS
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
SVD9N65T 0.85 62.5
SVD9N65F 2.63 120
Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Parameter Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge Gate-Drain Charge
Symbol BVDSS IDSS IGSS VGS(th)
Test conditions VGS=0V, ID=250µA VDS=650V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA
Min. 650 --2.0
RDS(on) VGS=10V, ID=4.5A
--
Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd
VDS=25V,VGS=0V, f=1.0MHZ
VDD=325V, VGS=10V, RG=25Ω, ID=9A
(Note 2,3)
VDS=520V,ID=9A, VGS=10V
(Note 2,3)
-----------
Typ. -----
Max. -10
±100 4.0
0.98 1.2
1338.2 113.8
9.4 25.3 15.3 105.2 22.6 34 6.9 12.8
-----------
Unit V µA nA V Ω
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:0.3 2010.10.11 Page 2 of 8
SVD9N65T/F
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Symbol
Test conditions
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Notes:
IS Integral Reverse p-n Junction
ISM Diode in the MOSFET
VSD IS=9A,VGS=0V
Trr IS=9A,VGS=0V,
Qrr dIF/dt=100A/µS
(Note 2)
1. L=30mH,IAS=5.88A,VDD=195V,RG=25Ω,starting TJ=25°C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature.
Min. ------
Typ. ---450 4.2
Max. 10 36 1.4 ---
Unit
A
V ns µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:0.3 2010.10.11 Page 3 of 8
TYPICAL CHARACTERISTICS
SVD9N65T/F
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:0.3 2010.10.11 Page 4 of 8
TYPICAL CHARACTERISTICS(continued)
SVD9N65T/F
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:0.3 2010.10.11 Page 5 of 8
SVD9N65T/F
TYPICAL TEST CIRCUIT
Gate Charge Test Circuit & Waveform
Same Type
VGS
50KΩ
as DUT
10V VDS
12V 200nF
300nF
Qg
Qgs Qgd
VGS
DUT
3mA
Charge
10V
VDS VGS
RG
Resistive Switching Test Circuit & Waveform
RL
DUT
VDD
VDS
90%
10%
VGS
td(on)
tr
ton
td(off)
tf
toff
RG 10V
tp
Unclamped Inductive Switching Test Circuit & Waveform
VDS ID
L
BVDSS IAS
EAS =
1 2
LIAS2
BVDSS BVDSS - VDD
DUT
VDD
VDD
ID(t) tp
VDS(t) Time
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:0.3 2010.10.11 Page 6 of 8
PACKAGE OUTLINE
TO-220-3L
SVD9N65T/F
UNIT: mm
TO-220F-3L
UNIT: mm
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:0.3 2010.10.11 Page 7 of 8
SVD9N65T/F
Disclaimer: • Silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. • All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause loss of body injury or damage to property. • Silan will supply the best possible product for cus.