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SVD9N65T Dataheets PDF



Part Number SVD9N65T
Manufacturers Silan Microelectronics
Logo Silan Microelectronics
Description 650V N-CHANNEL MOSFET
Datasheet SVD9N65T DatasheetSVD9N65T Datasheet (PDF)

9A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD9N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, .

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9A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD9N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 9A,650V,RDS(on)(typ.)=0.98Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE SVD9N65T/F ORDERING SPECIFICATIONS Part No. SVD9N65T SVD9N65F Package TO-220-3L TO-220F-3L Marking SVD9N65T SVD9N65F Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:0.3 2010.10.11 Page 1 of 8 SVD9N65T/F ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Pulsed Current Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS TJ Tstg SVD9N65T SVD9N65F 650 ±30 9 36 148 48 1.18 0.38 672 150 -55~+150 Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA SVD9N65T 0.85 62.5 SVD9N65F 2.63 120 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Parameter Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) Test conditions VGS=0V, ID=250µA VDS=650V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA Min. 650 --2.0 RDS(on) VGS=10V, ID=4.5A -- Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDS=25V,VGS=0V, f=1.0MHZ VDD=325V, VGS=10V, RG=25Ω, ID=9A (Note 2,3) VDS=520V,ID=9A, VGS=10V (Note 2,3) ----------- Typ. ----- Max. -10 ±100 4.0 0.98 1.2 1338.2 113.8 9.4 25.3 15.3 105.2 22.6 34 6.9 12.8 ----------- Unit V µA nA V Ω pF ns nC HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:0.3 2010.10.11 Page 2 of 8 SVD9N65T/F SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Parameter Symbol Test conditions Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Notes: IS Integral Reverse p-n Junction ISM Diode in the MOSFET VSD IS=9A,VGS=0V Trr IS=9A,VGS=0V, Qrr dIF/dt=100A/µS (Note 2) 1. L=30mH,IAS=5.88A,VDD=195V,RG=25Ω,starting TJ=25°C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature. Min. ------ Typ. ---450 4.2 Max. 10 36 1.4 --- Unit A V ns µC HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:0.3 2010.10.11 Page 3 of 8 TYPICAL CHARACTERISTICS SVD9N65T/F HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:0.3 2010.10.11 Page 4 of 8 TYPICAL CHARACTERISTICS(continued) SVD9N65T/F HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:0.3 2010.10.11 Page 5 of 8 SVD9N65T/F TYPICAL TEST CIRCUIT Gate Charge Test Circuit & Waveform Same Type VGS 50KΩ as DUT 10V VDS 12V 200nF 300nF Qg Qgs Qgd VGS DUT 3mA Charge 10V VDS VGS RG Resistive Switching Test Circuit & Waveform RL DUT VDD VDS 90% 10% VGS td(on) tr ton td(off) tf toff RG 10V tp Unclamped Inductive Switching Test Circuit & Waveform VDS ID L BVDSS IAS EAS = 1 2 LIAS2 BVDSS BVDSS - VDD DUT VDD VDD ID(t) tp VDS(t) Time HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:0.3 2010.10.11 Page 6 of 8 PACKAGE OUTLINE TO-220-3L SVD9N65T/F UNIT: mm TO-220F-3L UNIT: mm HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:0.3 2010.10.11 Page 7 of 8 SVD9N65T/F Disclaimer: • Silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. • All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause loss of body injury or damage to property. • Silan will supply the best possible product for cus.


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