SVD9N65F

9A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD9N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 9A,650V,RDS(on)(typ.)=0.98Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE SVD9N65T/F ORDERING SPECIFICATIONS Part No. SVD9N65T SVD9N65F Package TO-220-3L TO-220F-3L Marking SVD9N65T SVD9N65F Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:0.3 2010.10.11 Page 1 of 8 SVD9N65T/F ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Pulsed Current Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS TJ Tstg SVD9N65T SVD9N65F 650 ±30 9 36 148 48 1.18 0.38 672 150 -55～+150 Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Sy...