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SVD830F Dataheets PDF



Part Number SVD830F
Manufacturers Silan Microelectronics
Logo Silan Microelectronics
Description 500V N-CHANNEL MOSFET
Datasheet SVD830F DatasheetSVD830F Datasheet (PDF)

SVD830T/F/D_Datasheet 4.5A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD830T/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used.

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SVD830T/F/D_Datasheet 4.5A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD830T/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ 4.5A,500V,RDS(on(typ)=1.3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No. SVD830T SVD830F SVD830D SVD830DTR Package TO-220-3L TO-220F-3L TO-252-2L TO-252-2L Marking SVD830T SVD830F SVD830D SVD830D Material Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tape & Reel ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C, TO-220) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS TJ Tstg SVD830T 87.5 0.7 Rating SVD830F 500 ±30 4.5 18 42 0.34 256 -55~+150 -55~+150 SVD830D 76 0.61 Unit V V A A W W/°C mJ °C °C HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.3 2010.10.21 Page 1 of 8 SVD830T/F/D_Datasheet THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA SVD830T 1.43 62.5 Rating SVD830F 2.94 120 SVD830D 1.64 110 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Parameter Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) Test conditions VGS=0V, ID=250µA VDS=500V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA RDS(on) VGS=10V, ID=2.5A Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDS=25V,VGS=0V, f=1.0MHZ VDD=250V,ID=4.5A, RG=25Ω (Note 2,3) VDS=400V,ID=4.5A, VGS=10V (Note 2,3) Min. 500 --2.0 Typ. ----- Max. -10 ±100 4.0 Unit V µA nA V -- 1.3 1.5 Ω -- 548 --- 63 -- pF -- 5 -- -- 18 -- -- 13 --- 108 -- ns -- 16 -- -- 16 --- 2.7 -- nC -- 6.1 -- SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Parameter Symbol Test conditions Continuous Source Current IS Integral Reverse P-N Pulsed Source Current Junction Diode in the ISM MOSFET Diode Forward Voltage VSD IS=4.5A,VGS=0V Reverse Recovery Time Trr IS=4.5A,VGS=0V, Reverse Recovery Charge Qrr dIF/dt=100A/µs(Note 2) Notes: 1. L=30mH, IAS=3.72A,VDD=125V, RG=25Ω, starting TJ=25°C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature. Min. -- -- Typ. -- -- Max. 4.5 18 Unit A -- -- 1.5 V -- 250 -- ns -- 2.2 -- µC TYPICAL CHARACTERISTICS HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.3 2010.10.21 Page 2 of 8 SVD830T/F/D_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.3 2010.10.21 Page 3 of 8 SVD830T/F/D_Datasheet TYPICAL CHARACTERISTICS (continued) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn ID,Drain Current[A] ID,Drain Current[A] BVDSS(Normalized) Drain-Source Breakdown Voltage ID,Drain Current[A] ID,Drain Current[A] RDS(on) (Normalized) Drain-Source On-Resistance REV:1.3 2010.10.21 Page 4 of 8 SVD830T/F/D_Datasheet TYPICAL TEST CIRCUIT Gate Charge Test Circuit & Waveform Same Type VGS 50KΩ as DUT 10V VDS 12V 200nF 300nF Qg Qgs Qgd VGS DUT 3mA Charge 10V VDS VGS RG Resistive Switching Test Circuit & Waveform RL DUT VDD VDS 90% 10% VGS td(on) tr ton td(off) tf toff RG 10V tp Unclamped Inductive Switching Test Circuit & Waveform VDS ID L BVDSS IAS EAS = 1 2 LIAS2 BVDSS BVDSS - VDD DUT VDD VDD ID(t) tp VDS(t) Time HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.3 2010.10.21 Page 5 of 8 PACKAGE OUTLINE TO-220-3L SVD830T/F/D_Datasheet UNIT: mm TO-220F-3L UNIT: mm HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.3 2010.10.21 Page 6 of 8 PACKAGE OUTLINE (continued) TO-252-2L SVD830T/F/D_Datasheet UNIT: mm Disclaimer: • Silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. • All semiconductor products malfunction or fail with some probability under special conditions. W.


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