Document
SVD830T/F/D_Datasheet
4.5A, 500V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD830T/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 4.5A,500V,RDS(on(typ)=1.3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
ORDERING SPECIFICATIONS
Part No. SVD830T SVD830F SVD830D SVD830DTR
Package TO-220-3L TO-220F-3L TO-252-2L TO-252-2L
Marking SVD830T SVD830F SVD830D SVD830D
Material Pb free Pb free Pb free Pb free
Packing Tube Tube Tube
Tape & Reel
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C, TO-220)
-Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature
Symbol
VDS VGS ID IDM
PD
EAS TJ Tstg
SVD830T
87.5 0.7
Rating SVD830F
500 ±30 4.5 18 42 0.34 256 -55~+150 -55~+150
SVD830D
76 0.61
Unit
V V A A W W/°C mJ °C °C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2010.10.21 Page 1 of 8
SVD830T/F/D_Datasheet
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol
RθJC RθJA
SVD830T 1.43 62.5
Rating SVD830F
2.94 120
SVD830D 1.64 110
Unit
°C/W °C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Parameter Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge Gate-Drain Charge
Symbol BVDSS IDSS IGSS VGS(th)
Test conditions VGS=0V, ID=250µA VDS=500V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA
RDS(on) VGS=10V, ID=2.5A
Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd
VDS=25V,VGS=0V, f=1.0MHZ
VDD=250V,ID=4.5A, RG=25Ω
(Note 2,3)
VDS=400V,ID=4.5A, VGS=10V
(Note 2,3)
Min. 500 --2.0
Typ. -----
Max. -10
±100 4.0
Unit V µA nA V
-- 1.3 1.5 Ω
-- 548 --- 63 -- pF -- 5 --
-- 18 --
-- 13 --- 108 --
ns
-- 16 --
-- 16 --- 2.7 -- nC
-- 6.1 --
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Symbol
Test conditions
Continuous Source Current
IS Integral Reverse P-N
Pulsed Source Current
Junction Diode in the ISM MOSFET
Diode Forward Voltage
VSD IS=4.5A,VGS=0V
Reverse Recovery Time
Trr IS=4.5A,VGS=0V,
Reverse Recovery Charge
Qrr dIF/dt=100A/µs(Note 2)
Notes:
1. L=30mH, IAS=3.72A,VDD=125V, RG=25Ω, starting TJ=25°C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.
Min. --
--
Typ. --
--
Max. 4.5
18
Unit A
-- -- 1.5 V
-- 250 --
ns
-- 2.2 -- µC
TYPICAL CHARACTERISTICS
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2010.10.21 Page 2 of 8
SVD830T/F/D_Datasheet
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2010.10.21 Page 3 of 8
SVD830T/F/D_Datasheet
TYPICAL CHARACTERISTICS (continued)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
ID,Drain Current[A]
ID,Drain Current[A]
BVDSS(Normalized) Drain-Source Breakdown Voltage
ID,Drain Current[A]
ID,Drain Current[A]
RDS(on) (Normalized) Drain-Source On-Resistance
REV:1.3
2010.10.21 Page 4 of 8
SVD830T/F/D_Datasheet
TYPICAL TEST CIRCUIT
Gate Charge Test Circuit & Waveform
Same Type
VGS
50KΩ
as DUT
10V VDS
12V 200nF
300nF
Qg
Qgs Qgd
VGS
DUT
3mA
Charge
10V
VDS VGS
RG
Resistive Switching Test Circuit & Waveform
RL
DUT
VDD
VDS
90%
10%
VGS
td(on)
tr
ton
td(off)
tf
toff
RG 10V
tp
Unclamped Inductive Switching Test Circuit & Waveform
VDS ID
L
BVDSS IAS
EAS =
1 2
LIAS2
BVDSS BVDSS - VDD
DUT
VDD
VDD
ID(t) tp
VDS(t) Time
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2010.10.21 Page 5 of 8
PACKAGE OUTLINE
TO-220-3L
SVD830T/F/D_Datasheet
UNIT: mm
TO-220F-3L
UNIT: mm
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2010.10.21 Page 6 of 8
PACKAGE OUTLINE (continued)
TO-252-2L
SVD830T/F/D_Datasheet
UNIT: mm
Disclaimer: • Silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. • All semiconductor products malfunction or fail with some probability under special conditions. W.