Document
Transistors
2SB1260 / 2SB1181 / 2SB1241
Power Transistor (−80V, −1A)
2SB1260 / 2SB1181 / 2SB1241
5.5−+00..13 1.5±0.3 0.9 1.5
2.5 9.5±0.5
!Features 1) High breakdown voltage and high
current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733.
!Structure Epitaxial planar type PNP silicon transistor
!External dimensions (Units : mm)
2SB1260
4.5+−00..12 1.6±0.1
1.5−+00..12
2SB1181
6.5±0.2 5.1+−00..12
C0.5
2.3+−00..12 0.5±0.1
0.5±0.1
4.0 ±0.3 2.5−+00..12
1.0±0.2
(1) (2) (3)
0.4±0.1 1.5±0.1
0.5±0.1 3.0±0.2
0.4±0.1 1.5±0.1
ROHM : MPT3 EIAJ : SC-62
Abbreviated
∗symbol: BH
0.4−+00..015
0.75 0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1 1.0±0.2
(1) Base (2) Collector (3) Emitter
(1) (2) (3)
ROHM : CPT3 EIAJ : SC-63
(1) Base (2) Collector (3) Emitter
2SB1241
6.8±0.2
2.5±0.2
4.4±0.2
1.0 0.9
0.65Max.
14.5±0.5
0.5±0.1
(1) (2) (3) 2.54 2.54
1.05
0.45±0.1
ROHM : ATV
* Denotes hFE
!Absolute maximum ratings (Ta=25°C)
(1) Emitter (2) Collector (3) Base
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
2SB1260
Collector power
dissipation
2SB1241, 2SB1181
2SB1181
Junction temperature
Storage temperature
Symbol VCBO VCEO VEBO IC ICP
PC
Tj Tstg
Limits -80 -80 -5 -1 -2 0.5
2 1 10 150 -55~+150
Unit V V V
A(DC) A(Pulse) *1
*2
W
*3
W(Tc=25˚C) ˚C ˚C
*1 Single pulse, Pw=100ms *2 When mounted on a 40×40×0.7 mm ceramic board. *3 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
Transistors
2SB1260 / 2SB1181 / 2SB1241
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO -80
-
-
V IC=-50µA
Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current
BVCEO -80
-
-
V IC=-1mA
BVEBO -5 - - V IE=-50µA
ICBO
-
- -1 µA VCB=-60V
IEBO
-
- -1 µA VEB=-4V
Collector-emitter saturation voltage
VCE(sat)
-
- -0.4 V IC/IB=-500mA/-50mA
2SB1260, 2SB1181
82 - 390 -
DC current transfer ratio
hFE
VCE=-3V, IC=-0.1A
2SB1241
120 - 390 -
2SB1260, 2SB1241 Transition frequency
2SB1181
Output capacitance
fT Cob
- 100 - MHz VCE=-5V, IE=50mA, f=30MHz - 100 - MHz VCE=-10V, IE=50mA, f=30MHz - 25 - pF VCB=-10V, IE=0A, f=1MHz
!Packaging specifications and hFE
Type 2SB1260 2SB1241 2SB1181
Package Code Basic ordering hFE unit (pieces) PQR QR PQR
TL 2500
-
Taping TV2 2500 -
-
T100 1000
-
hFE values are classified as follows :
Item P Q R hFE 82~180 120~270 180~390
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) DC CURRENT GAIN : hFE
!Electrical characteristic curves
-1000
Ta=25˚C VCE=-5V
-100
-10
-1
-0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation characteristics
Ta=25˚C -1.0
-0.45mA
-0.8 -0.4mA
-0.35mA
-0.6 -0.3mA
-0.25mA
-0.4 -0.2mA -0.15mA
-0.2 0 0
-0.1mA
-0.05mA IB=0mA -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output characteristics
1000 500
Ta=25˚C
200 VCE=-3V
100 50 -1V
20
10 -1 -2 -5 -10 -20 -50-100 -200-500-1000-2000 COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector current
Transistors
2SB1260 / 2SB1181 / 2SB1241
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Ta=25˚C -2 -1 -0.5
-0.2 -0.1 -0.05
IC/IB=20 10
-0.02
-0.01 -1 -2 -5 -10 -20 -50-100-200-500-1000-2000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage vs. collector current
TRANSITION FREQUENCY : fT (MHz)
1000 500
Ta=25˚C VCE=-5V
200 100
50
20 10
5
2
1 12
5 10 20 50 100 200 500 1000
EMITTER CURRENT : IE (mA)
Fig.5 Gain bandwidth product vs. emitter current
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000 500
200 100
50
Ta=25˚C
f=1MHz IE=0A
20 10
5
2
1 -0.1 -0.2
-0.5 -1 -2
-5 -10 -20 -50 -100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance vs. collector-base voltage
EMITTER INPUT CAPACITANCE : Cib (pF)
1000 500
200 100
50
Ta=25˚C
f=1MHz IC=0A
20
10 -0.1 -0.2
-0.5 -1
-2
-5 -10
EMITTER TO BASE VOLTAGE : VEB (V)
Fig. 7 Emitter input capacitance vs. emitter-base voltage
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
PW=1P0Wm=1s00ms
PW=10m=1s00ms PW DC
-2 IC Max. (Pulse) -1 IC Max. -0.5
Ta=25˚C
* Single nonrepetitive pulse
-0.2
-0.1
-0.05
-0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig. 8 Safe operating area (2SB1260)
10 5
2 1 500m
IC Max. (Pulse) DC
Ta=25˚C
* Single nonrepetitive pulse
200m 100m
50m
20m
10m
*5m Printed circuit board:
2m 1.7 mm thick with collector 1m copper plating at least 1 cm2.
0.1 0.2 0.5 1 2 5 10 20
50 100200 5001000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area (2SB1241)
PW=100ms
-5 Ta=25˚C
* Single
-2 nonrepetitive pulse
-1 -0.5
-0.2
-0.1 -0.05
-0.02 -0.01
-0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig..