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B1241 Dataheets PDF



Part Number B1241
Manufacturers Rohm
Logo Rohm
Description 2SB1241
Datasheet B1241 DatasheetB1241 Datasheet (PDF)

Transistors 2SB1260 / 2SB1181 / 2SB1241 Power Transistor (−80V, −1A) 2SB1260 / 2SB1181 / 2SB1241 5.5−+00..13 1.5±0.3 0.9 1.5 2.5 9.5±0.5 !Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. !Structure Epitaxial planar type PNP silicon transistor !External dimensions (Units : mm) 2SB1260 4.5+−00..12 1.6±0.1 1.5−+00..12 2SB1181 6.5±0.2 5.1+−00..12 C0.5 2.3+−00..12 0.5±0.1 0.5±0.1.

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Transistors 2SB1260 / 2SB1181 / 2SB1241 Power Transistor (−80V, −1A) 2SB1260 / 2SB1181 / 2SB1241 5.5−+00..13 1.5±0.3 0.9 1.5 2.5 9.5±0.5 !Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. !Structure Epitaxial planar type PNP silicon transistor !External dimensions (Units : mm) 2SB1260 4.5+−00..12 1.6±0.1 1.5−+00..12 2SB1181 6.5±0.2 5.1+−00..12 C0.5 2.3+−00..12 0.5±0.1 0.5±0.1 4.0 ±0.3 2.5−+00..12 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 ROHM : MPT3 EIAJ : SC-62 Abbreviated ∗symbol: BH 0.4−+00..015 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 0.55±0.1 1.0±0.2 (1) Base (2) Collector (3) Emitter (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 2SB1241 6.8±0.2 2.5±0.2 4.4±0.2 1.0 0.9 0.65Max. 14.5±0.5 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 0.45±0.1 ROHM : ATV * Denotes hFE !Absolute maximum ratings (Ta=25°C) (1) Emitter (2) Collector (3) Base Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SB1260 Collector power dissipation 2SB1241, 2SB1181 2SB1181 Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits -80 -80 -5 -1 -2 0.5 2 1 10 150 -55~+150 Unit V V V A(DC) A(Pulse) *1 *2 W *3 W(Tc=25˚C) ˚C ˚C *1 Single pulse, Pw=100ms *2 When mounted on a 40×40×0.7 mm ceramic board. *3 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. Transistors 2SB1260 / 2SB1181 / 2SB1241 !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO -80 - - V IC=-50µA Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current BVCEO -80 - - V IC=-1mA BVEBO -5 - - V IE=-50µA ICBO - - -1 µA VCB=-60V IEBO - - -1 µA VEB=-4V Collector-emitter saturation voltage VCE(sat) - - -0.4 V IC/IB=-500mA/-50mA 2SB1260, 2SB1181 82 - 390 - DC current transfer ratio hFE VCE=-3V, IC=-0.1A 2SB1241 120 - 390 - 2SB1260, 2SB1241 Transition frequency 2SB1181 Output capacitance fT Cob - 100 - MHz VCE=-5V, IE=50mA, f=30MHz - 100 - MHz VCE=-10V, IE=50mA, f=30MHz - 25 - pF VCB=-10V, IE=0A, f=1MHz !Packaging specifications and hFE Type 2SB1260 2SB1241 2SB1181 Package Code Basic ordering hFE unit (pieces) PQR QR PQR TL 2500 - Taping TV2 2500 - - T100 1000 - hFE values are classified as follows : Item P Q R hFE 82~180 120~270 180~390 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) DC CURRENT GAIN : hFE !Electrical characteristic curves -1000 Ta=25˚C VCE=-5V -100 -10 -1 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics Ta=25˚C -1.0 -0.45mA -0.8 -0.4mA -0.35mA -0.6 -0.3mA -0.25mA -0.4 -0.2mA -0.15mA -0.2 0 0 -0.1mA -0.05mA IB=0mA -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics 1000 500 Ta=25˚C 200 VCE=-3V 100 50 -1V 20 10 -1 -2 -5 -10 -20 -50-100 -200-500-1000-2000 COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current Transistors 2SB1260 / 2SB1181 / 2SB1241 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25˚C -2 -1 -0.5 -0.2 -0.1 -0.05 IC/IB=20 10 -0.02 -0.01 -1 -2 -5 -10 -20 -50-100-200-500-1000-2000 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current TRANSITION FREQUENCY : fT (MHz) 1000 500 Ta=25˚C VCE=-5V 200 100 50 20 10 5 2 1 12 5 10 20 50 100 200 500 1000 EMITTER CURRENT : IE (mA) Fig.5 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 500 200 100 50 Ta=25˚C f=1MHz IE=0A 20 10 5 2 1 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.6 Collector output capacitance vs. collector-base voltage EMITTER INPUT CAPACITANCE : Cib (pF) 1000 500 200 100 50 Ta=25˚C f=1MHz IC=0A 20 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 EMITTER TO BASE VOLTAGE : VEB (V) Fig. 7 Emitter input capacitance vs. emitter-base voltage COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) PW=1P0Wm=1s00ms PW=10m=1s00ms PW DC -2 IC Max. (Pulse) -1 IC Max. -0.5 Ta=25˚C * Single nonrepetitive pulse -0.2 -0.1 -0.05 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig. 8 Safe operating area (2SB1260) 10 5 2 1 500m IC Max. (Pulse) DC Ta=25˚C * Single nonrepetitive pulse 200m 100m 50m 20m 10m *5m Printed circuit board: 2m 1.7 mm thick with collector 1m copper plating at least 1 cm2. 0.1 0.2 0.5 1 2 5 10 20 50 100200 5001000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area (2SB1241) PW=100ms -5 Ta=25˚C * Single -2 nonrepetitive pulse -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig..


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