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VS-209CNQ135PbF Dataheets PDF



Part Number VS-209CNQ135PbF
Manufacturers Vishay
Logo Vishay
Description High Performance Schottky Rectifiers
Datasheet VS-209CNQ135PbF DatasheetVS-209CNQ135PbF Datasheet (PDF)

www.vishay.com VS-209CNQ...PbF Series Vishay Semiconductors High Performance Schottky Rectifier, 200 A TO-244 Lug terminal anode 1 Lug terminal anode 2 Base common cathode PRIMARY CHARACTERISTICS IF(AV) VR Package 200 A 135 V, 150 V TO-244 Circuit configuration Two diodes common cathode FEATURES • 175 °C TJ operation • Center tap module • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • UL approved file E222165 • Des.

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www.vishay.com VS-209CNQ...PbF Series Vishay Semiconductors High Performance Schottky Rectifier, 200 A TO-244 Lug terminal anode 1 Lug terminal anode 2 Base common cathode PRIMARY CHARACTERISTICS IF(AV) VR Package 200 A 135 V, 150 V TO-244 Circuit configuration Two diodes common cathode FEATURES • 175 °C TJ operation • Center tap module • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • UL approved file E222165 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS The VS-209CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM Range IFSM tp = 5 μs sine VF 100 Apk, TJ = 125 °C (per leg) TJ Range VALUES 200 135/150 10 000 0.71 -55 to +175 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-209CNQ135PbF 135 VS-209CNQ150PbF 150 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current per leg See fig. 5 per device IF(AV) 50 % duty cycle at TC = 131 °C, rectangular waveform 100 200 Maximum peak one cycle non-repetitive surge current per leg See fig. 7 IFSM 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 10 000 1200 Non-repetitive avalanche energy per leg Repetitive avalanche current per leg EAS TJ = 25 °C, IAS = 5.5 A, L = 1 mH 15 Current decaying linearly to zero in 1 μs IAR Frequency limited by TJ maximum VA = 1.5 x VR 1 typical UNITS A mJ A Revision: 09-May-17 1 Document Number: 94156 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-209CNQ...PbF Series Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop per leg See fig. 1 VFM (1) Maximum reverse leakage current per leg See fig. 2 Maximum junction capacitance per leg Typical series inductance per leg Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % IRM (1) CT LS dV/dt 100 A 200 A 100 A 200 A TEST CONDITIONS TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C VR = Rated VR VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C From top of terminal hole to mounting plane Rated VR VALUES 1.06 1.33 0.74 0.88 3 45 3000 7.0 10 000 UNITS V mA pF nH V/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Thermal resistance, junction to case per leg per module TJ, TStg RthJC Thermal resistance, case to heatsink RthCS Weight Mounting torque Mounting torque center hole Terminal torque Vertical pull 2" lever pull MIN. -55 - - 35.4 (4) 30 (3.4) 30 (3.4) - TYP. - 0.10 68 2.4 - MAX. 175 0.38 0.19 - - 53.1 (6) 40 (4.6) 44.2 (5) 80 35 UNITS °C °C/W g oz. lbf in (N m) lbf in IF - Instantaneous Forward Current (A) IR - Reverse Current (mA) 1000 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 0 0.5 1.0 1.5 2.0 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 1000 100 10 1 0.1 TJ = 175 °C TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 75 °C TJ = 50 °C 0.01 TJ = 25 °C 0.001 0 30 60 90 120 150 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 09-May-17 2 Document Number: 94156 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 10 000 VS-209CNQ...PbF Series Vishay Semiconductors CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 0 30 60 90 120 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 ZthJC - Thermal Impedance (°C/W) 0.1 0.01 Single pulse (thermal resistance) D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 200 180 160 DC.


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