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VS-HFA90NH40PbF Dataheets PDF



Part Number VS-HFA90NH40PbF
Manufacturers Vishay
Logo Vishay
Description Ultrafast Soft Recovery Diode
Datasheet VS-HFA90NH40PbF DatasheetVS-HFA90NH40PbF Datasheet (PDF)

www.vishay.com VS-HFA90NH40PbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 210 A HALF-PAK (D-67) Lug terminal anode Base cathode FEATURES • Very low Qrr and trr • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • Reduced RFI and EMI • Reduced snubbing PRODUCT SUMMARY IF (maximum) VR IF(DC) at TC Package Circuit 210 A 400 V 106 A at 100 °C HALF-PAK (D-67) Single diode DESCR.

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www.vishay.com VS-HFA90NH40PbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 210 A HALF-PAK (D-67) Lug terminal anode Base cathode FEATURES • Very low Qrr and trr • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • Reduced RFI and EMI • Reduced snubbing PRODUCT SUMMARY IF (maximum) VR IF(DC) at TC Package Circuit 210 A 400 V 106 A at 100 °C HALF-PAK (D-67) Single diode DESCRIPTION HEXFRED® diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and dIF/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage VR Continuous forward current IF Single pulse forward current Non-repetitive avalanche energy IFSM EAS Maximum power dissipation PD Operating junction and storage temperature range TJ, TStg TEST CONDITIONS TC = 25 °C TC = 100 °C Limited by junction temperature L = 100 μH, duty cycle limited by maximum TJ TC = 25 °C TC = 100 °C VALUES 400 210 106 600 1.4 329 132 -55 to +150 UNITS V A mJ W °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Cathode to anode breakdown voltage VBR IR = 100 μA IF = 90 A Maximum forward voltage VFM IF = 180 A See fig. 1 IF = 90 A, TJ = 125 °C Maximum reverse leakage current IRM TJ = 125 °C, VR = 400 V See fig. 2 Junction capacitance CT VR = 200 V See fig. 3 Series inductance LS From top of terminal hole to mounting plane MIN. 400 - TYP. - 1.06 1.2 0.96 0.6 180 7.0 MAX. - 1.45 1.67 1.23 2 260 - UNITS V mA pF nH Revision: 02-Apr-14 1 Document Number: 94044 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-HFA90NH40PbF Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. Reverse recovery time See fig. 5 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of recovery current See fig. 8 trr IRRM Qrr dI(rec)M/dt TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 90 A dIF/dt = 200 A/μs VR = 200 V - 90 - 158 -9 - 15 - 420 - 1200 - 370 - 270 MAX. 140 240 17 30 1100 3200 - UNITS ns A nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage  temperature range Maximum thermal resistance, junction to case Typical thermal resistance,  case to heatsink TJ, TStg RthJC RthCS DC operation See fig. 4 Mounting surface, flat, smooth and greased Approximate weight Mounting torque Terminal torque Case style minimum maximum minimum maximum Non-lubricated threads HALF-PAK module VALUES -55 to 150 0.38 0.05 30 1.06 3 (26.5) 4 (35.4) 3.4 (30) 5 (44.2) UNITS °C °C/W g oz. N m (lbf in) 1000 100 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 94044_01 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 10 000 1000 100 10 TJ = 150 °C TJ = 125 °C 1 0.1 0.01 0.001 TJ = 25 °C 0.0001 100 94044_02 200 300 VR - Reverse Voltage (V) 400 Fig. 2 - Typical Reverse Current vs. Reverse Voltage IF - Instantaneous Forward Current (A) IR - Reverse Current (µA) Revision: 02-Apr-14 2 Document Number: 94044 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CT - Junction Capacitance (pF) www.vishay.com 10 000 1000 TJ = 25 °C Irrm (A) VS-HFA90NH40PbF Vishay Semiconductors 100 200 A, 125 °C 90 A, 125 °C 40 A, 125 °C 10 200 A, 25 °C 90 A, 25 °C 40 A, 25 °C Maximum Allowable Case Temperature (°C) 100 1 94044_03 10 100 VR - Reverse Voltage (V) 1000 Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 160 140 120 100 DC 80 60 40 20 0 0 94044_04 50 100 150 200 250 IF (AV) - DC Forward Current (A) Fig. 4 - Maximum Allowable Case Temperature vs. DC Forward Current 240 200 A, 125 °C 90 A, 125 °C 200 40 A, 125 °C 200 A, 25 °C 90 A, 25 °C 160 40 A, 25 °C 120 80 40 100 1000 94044_05 dIF/dt (A/µs) Fig. 5 - T.


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