www.vishay.com
VS-HFA90NH40PbF
Vishay Semiconductors
HEXFRED® Ultrafast Soft Recovery Diode, 210 A
HALF-PAK (D-67)
Lug terminal anode
Base cathode
FEATURES • Very low Qrr and trr • Designed and qualified for industrial level • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
BENEFITS • Reduced RFI and EMI • Reduced snubbing
PRODUCT SUMMARY
IF (maximum) VR
IF(DC) at TC Package Circuit
210 A 400 V 106 A at 100 °C HALF-PAK (D-67) Single diode
DESCRIPTION
HEXFRED® diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and dIF/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
VR
Continuous forward current
IF
Single pulse forward current Non-repetitive avalanche energy
IFSM EAS
Maximum power dissipation
PD
Operating junction and storage temperature range
TJ, TStg
TEST CONDITIONS
TC = 25 °C TC = 100 °C Limited by junction temperature L = 100 μH, duty cycle limited by maximum TJ TC = 25 °C TC = 100 °C
VALUES 400 210 106 600 1.4 329 132
-55 to +150
UNITS V
A
mJ W °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode breakdown voltage
VBR IR = 100 μA
IF = 90 A
Maximum forward voltage
VFM IF = 180 A
See fig. 1
IF = 90 A, TJ = 125 °C
Maximum reverse leakage current
IRM
TJ = 125 °C, VR = 400 V
See fig. 2
Junction capacitance
CT VR = 200 V
See fig. 3
Series inductance
LS From top of terminal hole to mounting plane
MIN.
400
-
TYP.
-
1.06 1.2 0.96 0.6 180 7.0
MAX.
-
1.45 1.67 1.23
2 260
-
UNITS
V
mA pF nH
Revision: 02-Apr-14
1 Document Number: 94044
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-HFA90NH40PbF
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time See fig. 5
Peak recovery current See fig. 6
Reverse recovery charge See fig. 7
Peak rate of recovery current See fig. 8
trr IRRM Qrr dI(rec)M/dt
TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C
IF = 90 A dIF/dt = 200 A/μs
VR = 200 V
- 90 - 158 -9 - 15 - 420 - 1200 - 370 - 270
MAX. 140 240 17 30 1100 3200
-
UNITS ns A nC A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Typical thermal resistance, case to heatsink
TJ, TStg RthJC RthCS
DC operation See fig. 4
Mounting surface, flat, smooth and greased
Approximate weight
Mounting torque
Terminal torque Case style
minimum maximum minimum maximum
Non-lubricated threads HALF-PAK module
VALUES -55 to 150
0.38
0.05 30 1.06 3 (26.5) 4 (35.4) 3.4 (30) 5 (44.2)
UNITS °C
°C/W
g oz.
N m (lbf in)
1000 100
10 TJ = 150 °C TJ = 125 °C TJ = 25 °C
1 0.0 0.5 1.0 1.5 2.0 2.5 3.0
94044_01
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
10 000 1000 100 10
TJ = 150 °C
TJ = 125 °C
1
0.1
0.01 0.001
TJ = 25 °C
0.0001 100
94044_02
200 300 VR - Reverse Voltage (V)
400
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
IF - Instantaneous Forward Current (A) IR - Reverse Current (µA)
Revision: 02-Apr-14
2 Document Number: 94044
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CT - Junction Capacitance (pF)
www.vishay.com
10 000
1000
TJ = 25 °C
Irrm (A)
VS-HFA90NH40PbF
Vishay Semiconductors
100
200 A, 125 °C 90 A, 125 °C 40 A, 125 °C
10
200 A, 25 °C 90 A, 25 °C 40 A, 25 °C
Maximum Allowable Case Temperature (°C)
100 1
94044_03
10 100 VR - Reverse Voltage (V)
1000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
160
140
120
100 DC
80
60
40
20
0 0
94044_04
50 100 150 200 250 IF (AV) - DC Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature vs. DC Forward Current
240
200 A, 125 °C 90 A, 125 °C 200 40 A, 125 °C 200 A, 25 °C 90 A, 25 °C 160 40 A, 25 °C
120
80
40 100
1000
94044_05
dIF/dt (A/µs)
Fig. 5 - T.