DatasheetsPDF.com

VS-VSKCU300-06PbF Dataheets PDF



Part Number VS-VSKCU300-06PbF
Manufacturers Vishay
Logo Vishay
Description Ultrafast Diodes
Datasheet VS-VSKCU300-06PbF DatasheetVS-VSKCU300-06PbF Datasheet (PDF)

www.vishay.com VS-VSKCU300/06PbF Vishay Semiconductors Ultrafast Diodes, 300 A (INT-A-PAK Power Modules) INT-A-PAK PRODUCT SUMMARY IF(AV) at TC 300 A at 48 °C Type Modules - Diode, High Voltage Package INT-A-PAK Circuit Two diodes common cathode FEATURES • Electrically insulated by DBC ceramic • 3500 VRMS isolating voltage • Standard JEDEC® package • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL approved file E78996 • Case styl.

  VS-VSKCU300-06PbF   VS-VSKCU300-06PbF


Document
www.vishay.com VS-VSKCU300/06PbF Vishay Semiconductors Ultrafast Diodes, 300 A (INT-A-PAK Power Modules) INT-A-PAK PRODUCT SUMMARY IF(AV) at TC 300 A at 48 °C Type Modules - Diode, High Voltage Package INT-A-PAK Circuit Two diodes common cathode FEATURES • Electrically insulated by DBC ceramic • 3500 VRMS isolating voltage • Standard JEDEC® package • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL approved file E78996 • Case style INT-A-PAK • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912    ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage VR Continuous forward current per leg IF Single pulse forward current IFSM Maximum power dissipation per leg PD Operating junction and storage temperature range RMS insulation voltage TJ, TStg VINS TEST CONDITIONS TC = 25 °C TC = 100 °C Limited by junction temperature TC = 25 °C TC = 100 °C 50 Hz, circuit to base,  all terminals shorted, t = 1 s VALUES 600 435 230 TBD 781 313 -40 to 150 3500 UNITS V A W °C V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. Cathode to anode breakdown voltage VBR IR = 500 μA 600 IF = 150 A - Forward voltage drop per leg IF = 300 A VFM IF = 150 A, TJ = 125 °C IF = 300 A, TJ = 125 °C - Maximum reverse leakage current IRM TJ = 150 °C, VR = 600 V - TYP. - 1.23 1.43 1.11 1.39 - MAX. - 1.53 1.96 1.29 1.73 50 UNITS V mA Revision: 11-Apr-14 1 Document Number: 93155 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-VSKCU300/06PbF Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. Reverse recovery time Peak recovery current Reverse recovery charge Peak rate of recovery current Softness factor per leg trr Irr Qrr dI(rec)M/dt s TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C IF = 50 A dI/dt = 200 A/μs VR = 400 V (per leg) TJ = 125 °C TJ = 125 °C IF = 50 A, TJ = 25 °C, dI/dt = 400 A/μs, VR = 200 V IF = 50 A, TJ = 125 °C, dI/dt = 400 A/μs, VR = 200 V - 130 195 11 20 670 1800 0.2 0.22 MAX. 165 260 18 30 1485 3900 400 - UNITS ns A nC A/μs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction operating and storage temperature range Maximum thermal resistance, junction to case per leg Typical thermal resistance, case to heatsink TJ, TStg RthJC RthCS DC operation Mounting surface, flat, smooth and greased Mounting torque ± 10 % to heatsink busbar A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow the spread of the compound. Approximate weight Case style VALUES -40 to 150 0.16 0.05 UNITS °C K/W 4 to 6 Nm 200 7.1 INT-A-PAK g oz. IF - Instantaneous Forward Current (A) IR - Reverse Current (mA) 1000 TJ = 150 °C 100 TJ = 25 °C 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 93155_01 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 100 TJ = 150 °C 10 1 0.1 0.01 TJ = 25 °C 0.001 100 200 300 400 500 600 93155_02 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 11-Apr-14 2 Document Number: 93155 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ZthJC - Thermal Impedance (°C/W) Allowable Case Temperature (°C) www.vishay.com VS-VSKCU300/06PbF Vishay Semiconductors 160 140 120 100 DC 80 60 40 20 Square wave (D = 0.50) 0 0 100 200 300 400 500 93155_03 IF(AV) - Average Forward Current (A) Fig. 3 - Maximum Allowable Case Temperature vs. Average Forward Current 1 0.1 0.01 0.001 0.00001 93155_04 Single pulse (thermal resistance) D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.0001 0.001 0.01 0.1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 1 10 900 800 Average Power Loss (W) 700 RMS limit 600 500 D = 0.20 400 D = 0.25 D = 0.33 300 D = 0.50 200 D = 0.75 DC 100 0 0 100 200 300 400 500 93155_05 IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics 1000 VR = 400 V trr (ns) 100 IF = 50 A, TJ = 25 °C 10 100 1000 93155_06 dIF/dt (A/μs) Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) Revision: 11-Apr-14 3 Document Number: 93155 For technical questions within yo.


VS-VSKDU162-12PbF VS-VSKCU300-06PbF VS-VSKDU300-06PbF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)