VS-GB200TH120U

www.vishay.com VS-GB200TH120U Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A Dual INT-A-PAK PRIMARY CHARACTERISTICS VCES IC at TC = 80 °C VCE(on) (typical) at IC = 200 A, 25 °C Speed 1200 V 200 A 3.10 V 8 kHz to 30 kHz Package Dual INT-A-PAK Circuit configuration Half bridge FEATURES 10 μs short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 °C Low switching losses Rugged with ultrafast performance Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bonding) technology Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Switching mode power supplies Inductive heating Electronic welder DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as electronic welder and inductive heating. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage Gate to emitter voltage Collector current Pulsed collector current Diode continuous forward current Diode maximum forward current Maximum power dissipation Short circuit withstand time RMS isolation voltage VCES VGES IC ICM (1) IF IFM PD tSC VISOL TC = 25 °C TC = 80 °C tp = 1 ms TC = 80 °C tp = 1 ms TJ = 150 °C TJ = 125 °C f = 50 Hz, t =...