VS-GB90DA120U

www.vishay.com VS-GB90DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A SOT-227 PRIMARY CHARACTERISTICS VCES IC DC VCE(on) typical at 75 A, 25 °C Speed 1200 V 90 A at 90 °C 3.3 V 8 kHz to 30 kHz Package SOT-227 Circuit configuration Single switch with AP diode FEATURES NPT Gen 5 IGBT technology Square RBSOA HEXFRED® low Qrr, low switching energy Positive VCE(on) temperature coefficient Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting on heatsink Plug-in compatible with other SOT-227 packages Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC Pulsed collector current Clamped inductive load current ICM ILM Diode continuous forward current IF Gate to emitter voltage VGE Power dissipation, IGBT PD Power dissipation, diode Isolation voltage PD VISOL TEST CONDITIONS TC = 25 °C TC = 90 °C TC = 25 °C TC = 90 °C TC = 25 °C TC = 90 °C TC = 25 °C TC = 90 °C Any terminal to case, t = 1 min MAX. 1200 149 90 200 200 76 46 ± 20 862 414 357 171 2500 UNITS V A V W V Revision: 10-Sep-2019 1 Docume...