VS-GB90DA60U

www.vishay.com VS-GB90DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 90 A SOT-227 PRODUCT SUMMARY VCES IC DC VCE(on) typical at 100 A, 25 °C IF DC Package Circuit 600 V 90 A at 90 °C 2.40 V 108 A at 90 °C SOT-227 Single Switch Diode FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Square RBSOA HEXFRED® antiparallel diodes with ultrasoft reverse recovery Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting to heatsink Plug-in compatible with other SOT-227 packages Higher switching frequency up to 150 kHz Lower conduction losses and switching losses Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC Pulsed collector current Clamped inductive load current ICM ILM Diode continuous forward current IF Gate-to-emitter voltage VGE Power dissipation, IGBT PD Power dissipation, diode Isolation voltage PD VISOL TEST CONDITIONS TC = 25 °C TC = 90 °C TC = 25 °C TC = 90 °C TC = 25 °C TC = 90 °C TC = 25 °C TC = 90 °C Any terminal to case, t = 1 min MAX. 600 147 90 300 300 18...