VS-50MT060WHTAPbF

www.vishay.com VS-50MT060WHTAPbF Vishay Semiconductors “Half Bridge” IGBT MTP (Warp Speed IGBT), 114 A MTP PRIMARY CHARACTERISTICS VCES VCE(on) typical at VGE = 15 V IC at TC = 25 °C Speed 600 V 2.3 V 114 A 30 kHz to 100 kHz Package MTP Circuit configuration Half bridge FEATURES Gen 4 warp speed IGBT technology HEXFRED® antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Very low junction to case thermal resistance UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Optimized for welding, UPS and SMPS applications Low EMI, requires less snubbing Direct mounting to heatsink PCB solderable terminals Very low stray inductance design for high speed operation ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC Pulsed collector current Peak switching current Diode continuous forward current Peak diode forward current Gate to emitter voltage RMS isolation voltage ICM ILM IF IFM VGE VISOL Maximum power dissipation PD TEST CONDITIONS TC = 25 °C TC = 109 °C TC = 109 °C Any terminal to case, t = 1 min TC = 25 °C TC = 100 °C MAX. 600 114 50 350 350 34 200 ± 20 2500 658 263 UNITS V A V W ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector ...