VS-GB200TS60NPbF

www.vishay.com VS-GB200TS60NPbF Vishay Semiconductors INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A INT-A-PAK PRODUCT SUMMARY VCES 600 V IC DC 209 A VCE(on) at 200 A, 25 °C 2.6 V Package INT-A-PAK Circuit Half Bridge with SMD Gate Resistor FEATURES Generation 5 Non Punch Through (NPT) technology Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz Low VCE(on) 10 μs short circuit capability Square RBSOA Positive VCE(on) temperature coefficient HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al2O3 DBC UL approved file E78996 Designed for industrial level Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Benchmark efficiency for UPS and welding application Rugged transient performance Direct mounting on heatsink Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC Pulsed collector current Clamped inductive load current ICM ILM Diode continuous forward current IF Gate to emitter voltage VGE Maximum power dissipation PD Isolation voltage Operating junction temperature range VISOL TJ TEST CONDITIONS TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C Any terminal to case, t = 1 min MAX. 600 209 142 400 400 178 121 ± 20 781 438 2500 -40 to +150 UNITS V A V W V °C Revision: 29-Apr-14 1...