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VS-GT50TP60N Dataheets PDF



Part Number VS-GT50TP60N
Manufacturers Vishay
Logo Vishay
Description Half-Bridge IGBT
Datasheet VS-GT50TP60N DatasheetVS-GT50TP60N Datasheet (PDF)

www.vishay.com VS-GT50TP60N Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 50 A INT-A-PAK FEATURES • Low VCE(on) trench IGBT technology • 5 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: For definitions of compliance please see www.vishay.com/d.

  VS-GT50TP60N   VS-GT50TP60N


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www.vishay.com VS-GT50TP60N Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 50 A INT-A-PAK FEATURES • Low VCE(on) trench IGBT technology • 5 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VCES IC at TC = 80 °C VCE(on) (typical) at IC = 50 A, 25 °C 600 V 50 A 1.65 V TYPICAL APPLICATIONS • UPS (Uninterruptable Power Supply) • Electronic welders • Switching mode power supplies DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as UPS and SMPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage Gate to emitter voltage Collector current Pulsed collector current Diode continuous forward current Diode maximum forward current VCES VGES IC ICM (1) IF IFM (1) TC = 25 °C TC = 80 °C tp = 1 ms TC = 80 °C tp = 1 ms Maximum power dissipation PD TJ = 175 °C Short circuit withstand time tSC TC = 125 °C RMS isolation voltage VISOL f = 50 Hz, t = 1 min Note (1) Repetitive rating: Pulse width limited by maximum junction temperature. MAX. 600 ± 20 85 50 100 50 100 208 5 4000 UNITS V A W μs V Revision: 17-Sep-12 1 Document Number: 94666 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-GT50TP60N Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter breakdown voltage Collector to emitter voltage Gate to emitter threshold voltage Collector cut-off current Gate to emitter leakage current V(BR)CES VCE(on) VGE(th) ICES IGES TJ = 25 °C VGE = 15 V, IC = 50 A, TJ = 25 °C VGE = 15 V, IC = 50 A, TJ = 175 °C VCE = VGE, IC = 1.4 mA, TJ = 25 °C VCE = VCES, VGE = 0 V, TJ = 25 °C VGE = VGES, VCE = 0 V, TJ = 25 °C MIN. 600 4.0 - TYP. - 1.65 2.05 4.9 - MAX. UNITS - 2.10 V 6.5 1.0 mA 400 nA SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Input capacitance Output capacitance Reverse transfer capacitance SC data Stray inductance Module lead resistance, terminal to chip SYMBOL td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Cies Coes Cres ISC LCE RCC’+EE’ TEST CONDITIONS VCC = 300 V, IC = 50 A, Rg = 3.3 , VGE = ± 15 V, TJ = 25 °C VCC = 300 V, IC = 50 A, Rg = 3.3 , VGE = ± 15 V, TJ = 125 °C VGE = 0 V, VCE = 30 V, f = 1.0 MHz tp  5 μs, VGE = 15 V, TJ = 125 °C, VCC = 360 V, VCEM  600 V MIN. - - - TYP. 58 31 80 100 0.41 0.42 64 37 90 117 0.69 0.69 3.03 0.25 0.09 450 0.75 MAX. UNITS ns mJ ns mJ - nF - -A 30 nH - m DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Forward voltage VF IF = 50 A TJ = 25 °C TJ = 125 °C Reverse recovery charge Peak reverse recovery current Reverse recovery energy TJ = 25 °C Qrr TJ = 125 °C Irr IF = 50 A, VR = 300 V, RG = 3.3  TJ = 25 °C VGE = - 15 V TJ = 125 °C TJ = 25 °C Erec TJ = 125 °C MIN. - TYP. 1.35 1.37 2.3 4.3 33 58 0.56 1.11 MAX. UNITS 1.75 V - μC - A - mJ - Revision: 17-Sep-12 2 Document Number: 94666 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IC (A) www.vishay.com VS-GT50TP60N Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range Storage temperature range Junction to case per ½ module IGBT Diode TJ TStg RthJC Case to sink (Conductive grease applied) Mounting torque RthCS Power terminal screw: M5 Mounting screw: M6 Weight Weight of module MIN. TYP. MAX. UNITS - - 175 °C - 40 - 125 °C - - 0.72 - - 1.02 K/W - 0.05 - 2.5 to 5.0 3.0 to 5.0 Nm - 150 - g 100 90 VGE = 15 V 80 70 25 °C 60 50 40 175 °C 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 VCE (V) Fig. 1 - IGBT Typical Output Characteristics 100 90 80 70 60 50 40 30 20 10 0 4 VCE (V) = 50 V 175 °C 25 °C 5 6 7 8 9 10 11 VGE (V) Fig. 2 - IGBT Transfer Characteristics E (mJ) E (mJ) 1.8 1.6 VCC = 300 V RG = 3.3 Ω 1.4 VGE = ± 15 V 1.2 TJ = 125 °C 1.0 0.8.


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