www.vishay.com
VS-GT50TP60N
Vishay Semiconductors
Half Bridge IGBT Power Module, 600 V, 50 A
INT-A-PAK
FEATURES
• Low VCE(on) trench IGBT technology • 5 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper
Bonding) technology • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VCES
IC at TC = 80 °C VCE(on) (typical) at IC = 50 A, 25 °C
600 V 50 A 1.65 V
TYPICAL APPLICATIONS • UPS (Uninterruptable Power Supply) • Electronic welders • Switching mode power supplies
DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage Gate to emitter voltage
Collector current
Pulsed collector current Diode continuous forward current Diode maximum forward current
VCES VGES
IC
ICM (1) IF
IFM (1)
TC = 25 °C TC = 80 °C tp = 1 ms TC = 80 °C tp = 1 ms
Maximum power dissipation
PD TJ = 175 °C
Short circuit withstand time
tSC TC = 125 °C
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 min
Note (1) Repetitive rating: Pulse width limited by maximum junction temperature.
MAX. 600 ± 20 85 50 100 50 100 208
5 4000
UNITS V
A
W μs V
Revision: 17-Sep-12
1 Document Number: 94666
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-GT50TP60N
Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate to emitter threshold voltage Collector cut-off current Gate to emitter leakage current
V(BR)CES
VCE(on)
VGE(th) ICES IGES
TJ = 25 °C VGE = 15 V, IC = 50 A, TJ = 25 °C VGE = 15 V, IC = 50 A, TJ = 175 °C VCE = VGE, IC = 1.4 mA, TJ = 25 °C VCE = VCES, VGE = 0 V, TJ = 25 °C VGE = VGES, VCE = 0 V, TJ = 25 °C
MIN. 600
4.0 -
TYP. -
1.65 2.05 4.9
-
MAX. UNITS -
2.10 V
6.5 1.0 mA 400 nA
SWITCHING CHARACTERISTICS
PARAMETER Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Input capacitance Output capacitance Reverse transfer capacitance
SC data
Stray inductance Module lead resistance, terminal to chip
SYMBOL td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Cies Coes Cres
ISC
LCE RCC’+EE’
TEST CONDITIONS
VCC = 300 V, IC = 50 A, Rg = 3.3 , VGE = ± 15 V, TJ = 25 °C
VCC = 300 V, IC = 50 A, Rg = 3.3 , VGE = ± 15 V, TJ = 125 °C
VGE = 0 V, VCE = 30 V, f = 1.0 MHz tp 5 μs, VGE = 15 V, TJ = 125 °C, VCC = 360 V, VCEM 600 V
MIN. -
-
-
TYP. 58 31 80 100 0.41 0.42 64 37 90 117 0.69 0.69 3.03 0.25 0.09
450
0.75
MAX. UNITS ns mJ ns mJ - nF -
-A
30 nH - m
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Forward voltage
VF IF = 50 A
TJ = 25 °C TJ = 125 °C
Reverse recovery charge Peak reverse recovery current Reverse recovery energy
TJ = 25 °C Qrr
TJ = 125 °C
Irr
IF = 50 A, VR = 300 V, RG = 3.3
TJ = 25 °C
VGE = - 15 V
TJ = 125 °C
TJ = 25 °C Erec
TJ = 125 °C
MIN. -
TYP. 1.35 1.37 2.3 4.3 33 58 0.56 1.11
MAX. UNITS 1.75
V -
μC -
A -
mJ -
Revision: 17-Sep-12
2 Document Number: 94666
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IC (A)
www.vishay.com
VS-GT50TP60N
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
Storage temperature range
Junction to case per ½ module
IGBT Diode
TJ TStg
RthJC
Case to sink (Conductive grease applied) Mounting torque
RthCS
Power terminal screw: M5 Mounting screw: M6
Weight
Weight of module
MIN. TYP. MAX. UNITS
- - 175 °C
- 40 - 125 °C
- - 0.72
- - 1.02 K/W
- 0.05 -
2.5 to 5.0 3.0 to 5.0
Nm
- 150 -
g
100
90 VGE = 15 V 80
70 25 °C
60
50
40 175 °C 30 20
10
0 0 0.5
1 1.5
2 2.5
3 3.5
VCE (V)
Fig. 1 - IGBT Typical Output Characteristics
100 90 80 70 60 50 40 30 20 10 0 4
VCE (V) = 50 V
175 °C 25 °C
5 6 7 8 9 10 11 VGE (V)
Fig. 2 - IGBT Transfer Characteristics
E (mJ)
E (mJ)
1.8
1.6
VCC = 300 V RG = 3.3 Ω
1.4 VGE = ± 15 V
1.2 TJ = 125 °C
1.0
0.8.