VS-GB75TP120U

www.vishay.com VS-GB75TP120U Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 75 A INT-A-PAK FEATURES High short circuit capability, self limiting to 6 x IC 10 μs short circuit capability VCE(on) with positive temperature coefficient Rugged with ultrafast performance Square RBSOA Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bonding) technology Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VCES IC at TC = 80 °C VCE(on) (typical) at IC = 75 A, 25 °C Package Circuit 1200 V 75 A 3.2 V INT-A-PAK Half Bridge TYPICAL APPLICATIONS Switching mode power supplies Inductive heating UPS Electronic welders DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage VCES Gate to emitter voltage VGES Collector current Pulsed collector current IC ICM (1) TC = 25 °C TC = 80 °C tp = 1 ms Diode continuous forward current IF Diode maximum forward current IFM Maximum power dissipation PD TJ = 150 °C Short circuit withstand time tSC TJ = 125 °C RMS isolation voltage VISOL f = 50 Hz, t = 1 min I2t-value, diode I2t VR = 0 V, t = 10 ms, TJ = 125 °C Note...