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VS-GT100TP60N
Vishay Semiconductors
Half Bridge IGBT Power Module, 600 V, 100 A
INT-A-PAK
PRIMARY CHARACTERISTICS
VCES
IC at TC = 80 °C
VCE(on) (typical) at IC = 100 A, 25 °C
Speed
600 V 100 A 1.65 V 8 kHz to 30 kHz
Package
INT-A-PAK
Circuit configuration
Half bridge
FEATURES • Low VCE(on) trench IGBT technology • 5 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (direct copper
bonding) technology • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS • UPS (uninterruptable power supply) • Switching mode power supplies • Electronic welders
DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage Gate to emitter voltage
Collector current
Pulsed collector current Diode continuous forward current Diode maximum forward current Maximum power dissipation Short circuit withstand time RMS isolation voltage
VCES VGES
IC
ICM (1) IF
IFM (1) PD tSC
VISOL
TC = 25 °C TC = 80 °C tp = 1 ms TC = 80 °C tp = 1 ms TJ = 175 °C TC = 125 °C f = 50 Hz, t = 1 min
Note (1) Repetitive rating: pulse width limited by maximum junction temperature
MAX. 600 ± 20 160 100 200 100 200 417
5 4000
UNITS V
A
W μs V
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate to emitter threshold voltage Collector cut-off current Gate to emitter leakage current
V(BR)CES
VCE(on)
VGE(th) ICES IGES
TJ = 25 °C VGE = 15 V, IC = 100 A, TJ = 25 °C VGE = 15 V, IC = 100 A, TJ = 175 °C VCE = VGE, IC = 1.0 mA, TJ = 25 °C VCE = VCES, VGE = 0 V, TJ = 25 °C VGE = VGES, VCE = 0 V, TJ = 25 °C
MIN. 600
4.0 -
TYP. -
1.65 2.00 4.4
-
MAX. -
2.10 -
6.5 5.0 400
UNITS
V
mA nA
Revision: 19-Sep-17
1 Document Number: 93799
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-GT100TP60N
Vishay Semiconductors
SWITCHING CHARACTERISTICS
PARAMETER Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Input capacitance Output capacitance Reverse transfer capacitance
SC data
Stray inductance Module lead resistance, terminal to chip
SYMBOL td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Cies Coes Cres
ISC
LCE RCC’+EE’
TEST CONDITIONS
VCC = 300 V, IC = 100 A, Rg = 2.2 , VGE = ± 15 V, TJ = 25 °C
VCC = 300 V, IC = 100 A, Rg = 2.2 , VGE = ± 15 V, TJ = 125 °C
VGE = 0 V, VCE = 30 V, f = 1.0 MHz tp 5 μs, VGE = 15 V, TJ = 125 °C, VCC = 360 V, VCEM 1200 V
MIN. -
-
-
TYP. 106 49 102 85 0.46 0.95 112 62 126 109 0.78 1.73 7.71 0.53 0.23
900
0.75
MAX. -
UNITS ns mJ ns mJ nF
-A
30 nH - m
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Forward voltage Reverse recovery charge Peak reverse recovery current Reverse recovery energy
VF IF = 100 A
TJ = 25 °C TJ = 125 °C
Qrr
TJ = 25 °C TJ = 125 °C
Irr
IF = 100 A, VR = 600 V, RG = 5.6
VGE = -15 V
TJ = 25 °C TJ = 125 °C
Erec
TJ = 25 °C TJ = 125 °C
MIN. -
TYP. 1.40 1.40 5.5 7.3 68 88 0.89 1.71
MAX. 1.80
-
UNITS V μC A mJ
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature Storage temperature range
Junction to case
IGBT Diode
TJ TStg
RthJC
Case to sink (conductive grease applied) Mounting torque
RthCS
Power terminal screw: M5 Mounting screw: M6
Weight
MIN. TYP. MAX. - - 175
-40 - 125 - - 0.36 - - 0.57 - 0.05 2.5 to 5.0 3.0 to 5.0 - 150 -
UNITS °C
K/W
Nm g
Revision: 19-Sep-17
2 Document Number: 93799
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IC (A)
IC (A)
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200
175 VGE = 15 V
150 25 °C
125
100 175 °C
75
50
25
0 0 0.5
1 1.5
2 2.5
3 3.5
VCE (V)
Fig. 1 - IGBT Typical Output Characteristics
200
175 VCE = 50 V
150
125 175 °C
100
75
50 25 °C
25
0 4 5 6 7 8 9 10
VGE (V) Fig. 2 - IGBT Transfer Characteristi.