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VS-GT100TP60N Dataheets PDF



Part Number VS-GT100TP60N
Manufacturers Vishay
Logo Vishay
Description Half Bridge IGBT
Datasheet VS-GT100TP60N DatasheetVS-GT100TP60N Datasheet (PDF)

www.vishay.com VS-GT100TP60N Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A INT-A-PAK PRIMARY CHARACTERISTICS VCES IC at TC = 80 °C VCE(on) (typical) at IC = 100 A, 25 °C Speed 600 V 100 A 1.65 V 8 kHz to 30 kHz Package INT-A-PAK Circuit configuration Half bridge FEATURES • Low VCE(on) trench IGBT technology • 5 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reve.

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www.vishay.com VS-GT100TP60N Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A INT-A-PAK PRIMARY CHARACTERISTICS VCES IC at TC = 80 °C VCE(on) (typical) at IC = 100 A, 25 °C Speed 600 V 100 A 1.65 V 8 kHz to 30 kHz Package INT-A-PAK Circuit configuration Half bridge FEATURES • Low VCE(on) trench IGBT technology • 5 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (direct copper bonding) technology • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • UPS (uninterruptable power supply) • Switching mode power supplies • Electronic welders DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as UPS and SMPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage Gate to emitter voltage Collector current Pulsed collector current Diode continuous forward current Diode maximum forward current Maximum power dissipation Short circuit withstand time RMS isolation voltage VCES VGES IC ICM (1) IF IFM (1) PD tSC VISOL TC = 25 °C TC = 80 °C tp = 1 ms TC = 80 °C tp = 1 ms TJ = 175 °C TC = 125 °C f = 50 Hz, t = 1 min Note (1) Repetitive rating: pulse width limited by maximum junction temperature MAX. 600 ± 20 160 100 200 100 200 417 5 4000 UNITS V A W μs V IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter breakdown voltage Collector to emitter voltage Gate to emitter threshold voltage Collector cut-off current Gate to emitter leakage current V(BR)CES VCE(on) VGE(th) ICES IGES TJ = 25 °C VGE = 15 V, IC = 100 A, TJ = 25 °C VGE = 15 V, IC = 100 A, TJ = 175 °C VCE = VGE, IC = 1.0 mA, TJ = 25 °C VCE = VCES, VGE = 0 V, TJ = 25 °C VGE = VGES, VCE = 0 V, TJ = 25 °C MIN. 600 4.0 - TYP. - 1.65 2.00 4.4 - MAX. - 2.10 - 6.5 5.0 400 UNITS V mA nA Revision: 19-Sep-17 1 Document Number: 93799 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-GT100TP60N Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Input capacitance Output capacitance Reverse transfer capacitance SC data Stray inductance Module lead resistance, terminal to chip SYMBOL td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Cies Coes Cres ISC LCE RCC’+EE’ TEST CONDITIONS VCC = 300 V, IC = 100 A, Rg = 2.2 , VGE = ± 15 V, TJ = 25 °C VCC = 300 V, IC = 100 A, Rg = 2.2 , VGE = ± 15 V, TJ = 125 °C VGE = 0 V, VCE = 30 V, f = 1.0 MHz tp  5 μs, VGE = 15 V, TJ = 125 °C,  VCC = 360 V, VCEM  1200 V MIN. - - - TYP. 106 49 102 85 0.46 0.95 112 62 126 109 0.78 1.73 7.71 0.53 0.23 900 0.75 MAX. - UNITS ns mJ ns mJ nF -A 30 nH - m DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Forward voltage Reverse recovery charge Peak reverse recovery current Reverse recovery energy VF IF = 100 A TJ = 25 °C TJ = 125 °C Qrr TJ = 25 °C TJ = 125 °C Irr IF = 100 A, VR = 600 V, RG = 5.6  VGE = -15 V TJ = 25 °C TJ = 125 °C Erec TJ = 25 °C TJ = 125 °C MIN. - TYP. 1.40 1.40 5.5 7.3 68 88 0.89 1.71 MAX. 1.80 - UNITS V μC A mJ THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature Storage temperature range Junction to case IGBT Diode TJ TStg RthJC Case to sink (conductive grease applied) Mounting torque RthCS Power terminal screw: M5 Mounting screw: M6 Weight MIN. TYP. MAX. - - 175 -40 - 125 - - 0.36 - - 0.57 - 0.05 2.5 to 5.0 3.0 to 5.0 - 150 - UNITS °C K/W Nm g Revision: 19-Sep-17 2 Document Number: 93799 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IC (A) IC (A) www.vishay.com 200 175 VGE = 15 V 150 25 °C 125 100 175 °C 75 50 25 0 0 0.5 1 1.5 2 2.5 3 3.5 VCE (V) Fig. 1 - IGBT Typical Output Characteristics 200 175 VCE = 50 V 150 125 175 °C 100 75 50 25 °C 25 0 4 5 6 7 8 9 10 VGE (V) Fig. 2 - IGBT Transfer Characteristi.


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