Half Bridge IGBT
www.vishay.com
VS-GT100TP120N
Vishay Semiconductors
Half Bridge IGBT Power Module, 1200 V, 100 A
INT-A-PAK
PRODUCT S...
Description
www.vishay.com
VS-GT100TP120N
Vishay Semiconductors
Half Bridge IGBT Power Module, 1200 V, 100 A
INT-A-PAK
PRODUCT SUMMARY
VCES IC at TC = 80 °C VCE(on) (typical) at IC = 100 A, 25 °C
Speed
Package
Circuit
1200 V 100 A
1.90 V
8 kHz to 30 kHz INT-A-PAK Half bridge
FEATURES Low VCE(sat) trench IGBT technology 10 μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 °C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper
Bonding) technology Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS UPS (Uninterruptable Power Supply) Inverter for motor drive AC and DC servo drive amplifier
DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage Gate to emitter voltage
Collector current
Pulsed collector current Diode continuous forward current Diode maximum forward current Maximum power dissipation Short circuit withstand time RMS isolation voltage
VCES VGES
IC
ICM (1) IF
IFM (1) PD tSC
VISOL
TC = 25 °C TC = 80 °C tp = 1 ms TC = 80 °C tp = 1 ms TJ = 175 °C TC = 125 °C f = 50 Hz, t = 1 min
Note (1) Repetitive rating: pulse width limit...
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