www.vishay.com
VS-GB150TH120N
Vishay Semiconductors
Molding Type Module IGBT, 2-in-1 Package, 1200 V and 150 A
Double INT-A-PAK
PRODUCT SUMMARY
VCES
IC at TC = 80 °C VCE(on) (typical) at IC = 150 A, 25 °C
Package
Circuit
1200 V 150 A 1.9 V Double INT-A-PAK Half bridge
FEATURES • Low VCE(on) SPT + IGBT technology • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper
Bonding) technology • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS • Inverter for motor drive • AC and DC servo drive amplifier • Uninterruptible power supply (UPS)
DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage Gate to emitter voltage
Collector current
Pulsed collector current Diode continuous forward current Diode maximum forward current
VCES VGES
IC
ICM (1) IF IFM
TC = 25 °C TC = 80 °C tp = 1 ms TC = 80 °C tp = 1 ms
Maximum power dissipation
PD TJ = 150 °C
Short circuit withstand time
tSC TJ = 125 °C
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 min
Note (1) Repetitive rating: Pulse width limited by maximum junction temperature.
MAX. 1200 ± 20 300 150 300 150 300 1008
10 2500
UNITS V
A
W μs V
Revision: 03-Jul-14
1 Document Number: 94760
For technical questions within your region:
[email protected],
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-GB150TH120N
Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate to emitter threshold voltage Collector cut-off current Gate to emitter leakage current
V(BR)CES
VCE(on)
VGE(th) ICES IGES
TJ = 25 °C VGE = 15 V, IC = 150 A, TJ = 25 °C VGE = 15 V, IC = 150 A, TJ = 125 °C VCE = VGE, IC = 6 mA, TJ = 25 °C VCE = VCES, VGE = 0 V, TJ = 25 °C VGE = VGES, VCE = 0 V, TJ = 25 °C
MIN. 1200
5.0 -
TYP. -
1.90 2.10 6.2
-
MAX. UNITS -
2.35 V
7.0 5.0 mA 400 nA
SWITCHING CHARACTERISTICS
PARAMETER Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Input capacitance Output capacitance Reverse transfer capacitance
SC data
Internal gate resistance Stray inductance Module lead resistance, terminal to chip
SYMBOL td(on) tr td(off) tf.