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VS-GB150TH120N Dataheets PDF



Part Number VS-GB150TH120N
Manufacturers Vishay
Logo Vishay
Description Molding Type Module IGBT
Datasheet VS-GB150TH120N DatasheetVS-GB150TH120N Datasheet (PDF)

www.vishay.com VS-GB150TH120N Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 150 A Double INT-A-PAK PRODUCT SUMMARY VCES IC at TC = 80 °C VCE(on) (typical) at IC = 150 A, 25 °C Package Circuit 1200 V 150 A 1.9 V Double INT-A-PAK Half bridge FEATURES • Low VCE(on) SPT + IGBT technology • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antipa.

  VS-GB150TH120N   VS-GB150TH120N



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www.vishay.com VS-GB150TH120N Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 150 A Double INT-A-PAK PRODUCT SUMMARY VCES IC at TC = 80 °C VCE(on) (typical) at IC = 150 A, 25 °C Package Circuit 1200 V 150 A 1.9 V Double INT-A-PAK Half bridge FEATURES • Low VCE(on) SPT + IGBT technology • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • Inverter for motor drive • AC and DC servo drive amplifier • Uninterruptible power supply (UPS) DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage Gate to emitter voltage Collector current Pulsed collector current Diode continuous forward current Diode maximum forward current VCES VGES IC ICM (1) IF IFM TC = 25 °C TC = 80 °C tp = 1 ms TC = 80 °C tp = 1 ms Maximum power dissipation PD TJ = 150 °C Short circuit withstand time tSC TJ = 125 °C RMS isolation voltage VISOL f = 50 Hz, t = 1 min Note (1) Repetitive rating: Pulse width limited by maximum junction temperature. MAX. 1200 ± 20 300 150 300 150 300 1008 10 2500 UNITS V A W μs V Revision: 03-Jul-14 1 Document Number: 94760 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-GB150TH120N Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter breakdown voltage Collector to emitter voltage Gate to emitter threshold voltage Collector cut-off current Gate to emitter leakage current V(BR)CES VCE(on) VGE(th) ICES IGES TJ = 25 °C VGE = 15 V, IC = 150 A, TJ = 25 °C VGE = 15 V, IC = 150 A, TJ = 125 °C VCE = VGE, IC = 6 mA, TJ = 25 °C VCE = VCES, VGE = 0 V, TJ = 25 °C VGE = VGES, VCE = 0 V, TJ = 25 °C MIN. 1200 5.0 - TYP. - 1.90 2.10 6.2 - MAX. UNITS - 2.35 V 7.0 5.0 mA 400 nA SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Input capacitance Output capacitance Reverse transfer capacitance SC data Internal gate resistance Stray inductance Module lead resistance, terminal to chip SYMBOL td(on) tr td(off) tf.


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